Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen

Ryosuke Kubota, Koji Nakashima, Dai Mizuno, Toshiharu Saiki, Masaru Sakai, Kazunari Matsuda, Takashi Ishizuka

    Research output: Contribution to journalArticle

    Abstract

    The nonuniform distribution of nitrogen in dilute GaInNAs alloys was investigated by low-temperature near-field photoluminescence (PL) imaging spectroscopy of localized states driven by giant band-gap reduction due to nitrogen incorporation. The depths and spatial profiles of exciton confinement potential were visualized through the measurement of power-dependent PL spectra and high-resolution PL images. For two GaInNAs quantum wells with different nitrogen contents, we observed strongly localized excitons confined in nitrogen clusters and rather delocalized excitons, which indicate the onset of alloy formation

    Original languageEnglish
    Article number11592
    JournalJournal of Nanophotonics
    Volume1
    Issue number1
    DOIs
    Publication statusPublished - 2007 Dec 1

    Keywords

    • Dilute nitride
    • Imaging spectroscopy
    • Localized exciton
    • Metal-organic vapor phase epitaxy
    • Near-field scanning optical microscope
    • Quantum well

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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