Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen

Ryosuke Kubota; Koji Nakashima; Dai Mizuno; Toshiharu Saiki; Masaru Sakai; Kazunari Matsuda; Takashi Ishizuka

doi:10.1117/1.2816112

Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen

Ryosuke Kubota, Koji Nakashima, Dai Mizuno, Toshiharu Saiki, Masaru Sakai, Kazunari Matsuda, Takashi Ishizuka

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The nonuniform distribution of nitrogen in dilute GaInNAs alloys was investigated by low-temperature near-field photoluminescence (PL) imaging spectroscopy of localized states driven by giant band-gap reduction due to nitrogen incorporation. The depths and spatial profiles of exciton confinement potential were visualized through the measurement of power-dependent PL spectra and high-resolution PL images. For two GaInNAs quantum wells with different nitrogen contents, we observed strongly localized excitons confined in nitrogen clusters and rather delocalized excitons, which indicate the onset of alloy formation

Original language	English
Article number	11592
Journal	Journal of Nanophotonics
Volume	1
Issue number	1
DOIs	https://doi.org/10.1117/1.2816112
Publication status	Published - 2007

Keywords

Dilute nitride
Imaging spectroscopy
Localized exciton
Metal-organic vapor phase epitaxy
Near-field scanning optical microscope
Quantum well

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/1.2816112

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title = "Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen",

abstract = "The nonuniform distribution of nitrogen in dilute GaInNAs alloys was investigated by low-temperature near-field photoluminescence (PL) imaging spectroscopy of localized states driven by giant band-gap reduction due to nitrogen incorporation. The depths and spatial profiles of exciton confinement potential were visualized through the measurement of power-dependent PL spectra and high-resolution PL images. For two GaInNAs quantum wells with different nitrogen contents, we observed strongly localized excitons confined in nitrogen clusters and rather delocalized excitons, which indicate the onset of alloy formation",

keywords = "Dilute nitride, Imaging spectroscopy, Localized exciton, Metal-organic vapor phase epitaxy, Near-field scanning optical microscope, Quantum well",

author = "Ryosuke Kubota and Koji Nakashima and Dai Mizuno and Toshiharu Saiki and Masaru Sakai and Kazunari Matsuda and Takashi Ishizuka",

note = "Funding Information: This work is supported in part by a Grant in Aid for the Global Center of Excellence for High-Level Global Cooperation for Leading-Edge Platform on Access Spaces from the Ministry of Education, Culture, Sport, Science, and Technology in Japan.",

year = "2007",

doi = "10.1117/1.2816112",

language = "English",

volume = "1",

journal = "Journal of Nanophotonics",

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T1 - Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen

AU - Kubota, Ryosuke

AU - Nakashima, Koji

AU - Mizuno, Dai

AU - Saiki, Toshiharu

AU - Sakai, Masaru

AU - Matsuda, Kazunari

AU - Ishizuka, Takashi

N1 - Funding Information: This work is supported in part by a Grant in Aid for the Global Center of Excellence for High-Level Global Cooperation for Leading-Edge Platform on Access Spaces from the Ministry of Education, Culture, Sport, Science, and Technology in Japan.

PY - 2007

Y1 - 2007

N2 - The nonuniform distribution of nitrogen in dilute GaInNAs alloys was investigated by low-temperature near-field photoluminescence (PL) imaging spectroscopy of localized states driven by giant band-gap reduction due to nitrogen incorporation. The depths and spatial profiles of exciton confinement potential were visualized through the measurement of power-dependent PL spectra and high-resolution PL images. For two GaInNAs quantum wells with different nitrogen contents, we observed strongly localized excitons confined in nitrogen clusters and rather delocalized excitons, which indicate the onset of alloy formation

AB - The nonuniform distribution of nitrogen in dilute GaInNAs alloys was investigated by low-temperature near-field photoluminescence (PL) imaging spectroscopy of localized states driven by giant band-gap reduction due to nitrogen incorporation. The depths and spatial profiles of exciton confinement potential were visualized through the measurement of power-dependent PL spectra and high-resolution PL images. For two GaInNAs quantum wells with different nitrogen contents, we observed strongly localized excitons confined in nitrogen clusters and rather delocalized excitons, which indicate the onset of alloy formation

KW - Dilute nitride

KW - Imaging spectroscopy

KW - Localized exciton

KW - Metal-organic vapor phase epitaxy

KW - Near-field scanning optical microscope

KW - Quantum well

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DO - 10.1117/1.2816112

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M1 - 11592

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Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen

Abstract

Keywords

ASJC Scopus subject areas

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