Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar

T. Ohmori; T. K. Goto; T. Kitajima; T. Makabe

doi:10.1063/1.1630163

Negative charge injection to a positively charged SiO₂ hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF₄/Ar

T. Ohmori, T. K. Goto, T. Kitajima, T. Makabe

Vice-President

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

In a pulsed 2f-CCP in CF₄/Ar, the correlation between a reduction of the charging voltage at the bottom of a SiO₂ hole under etching and negative charge injection to the hole was examined. A comparison of the bottom potentials of the SiO₂ holes between those with exposure plasmas in pure Ar and those in CF₄ made it possible to identify, as the injected charge, light electrons and massive negative ions in an electronegative plasma.

Original language	English
Pages (from-to)	4637-4639
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1630163
Publication status	Published - 2003 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1630163

Cite this

@article{20691a02b244463c85abba81efebba28,

title = "Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar",

abstract = "In a pulsed 2f-CCP in CF4/Ar, the correlation between a reduction of the charging voltage at the bottom of a SiO2 hole under etching and negative charge injection to the hole was examined. A comparison of the bottom potentials of the SiO2 holes between those with exposure plasmas in pure Ar and those in CF4 made it possible to identify, as the injected charge, light electrons and massive negative ions in an electronegative plasma.",

author = "T. Ohmori and Goto, {T. K.} and T. Kitajima and T. Makabe",

year = "2003",

month = dec,

day = "1",

doi = "10.1063/1.1630163",

language = "English",

volume = "83",

pages = "4637--4639",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar

AU - Ohmori, T.

AU - Goto, T. K.

AU - Kitajima, T.

AU - Makabe, T.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In a pulsed 2f-CCP in CF4/Ar, the correlation between a reduction of the charging voltage at the bottom of a SiO2 hole under etching and negative charge injection to the hole was examined. A comparison of the bottom potentials of the SiO2 holes between those with exposure plasmas in pure Ar and those in CF4 made it possible to identify, as the injected charge, light electrons and massive negative ions in an electronegative plasma.

AB - In a pulsed 2f-CCP in CF4/Ar, the correlation between a reduction of the charging voltage at the bottom of a SiO2 hole under etching and negative charge injection to the hole was examined. A comparison of the bottom potentials of the SiO2 holes between those with exposure plasmas in pure Ar and those in CF4 made it possible to identify, as the injected charge, light electrons and massive negative ions in an electronegative plasma.

UR - http://www.scopus.com/inward/record.url?scp=0347477185&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347477185&partnerID=8YFLogxK

U2 - 10.1063/1.1630163

DO - 10.1063/1.1630163

M3 - Article

AN - SCOPUS:0347477185

SN - 0003-6951

VL - 83

SP - 4637

EP - 4639

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Negative charge injection to a positively charged SiO₂ hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF₄/Ar

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this