Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar

T. Ohmori, T. K. Goto, T. Kitajima, T. Makabe

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

In a pulsed 2f-CCP in CF4/Ar, the correlation between a reduction of the charging voltage at the bottom of a SiO2 hole under etching and negative charge injection to the hole was examined. A comparison of the bottom potentials of the SiO2 holes between those with exposure plasmas in pure Ar and those in CF4 made it possible to identify, as the injected charge, light electrons and massive negative ions in an electronegative plasma.

Original languageEnglish
Pages (from-to)4637-4639
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number22
DOIs
Publication statusPublished - 2003 Dec 1

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plasma etching
injection
negative ions
charging
etching
electric potential
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar. / Ohmori, T.; Goto, T. K.; Kitajima, T.; Makabe, T.

In: Applied Physics Letters, Vol. 83, No. 22, 01.12.2003, p. 4637-4639.

Research output: Contribution to journalArticle

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