Negative charge injection to a wafer in a pulsed two-frequency capacitively coupled plasma for oxide etching; diagnostics by emission-selected computerized tomography

Takeshi Ohmori, Takeshi Goto, Toshiaki Makabe

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

In order to develop charging-free plasma processing, we investigated the function of negative charge injection to a SiO2 wafer, during etching in a pulsed two-frequency capacitively coupled plasma under various external conditions in CF4/Ar at low pressures, by using emission-selected computerized tomography. The formation of a negatively-charged layer by an excess negative charge in the interface close to the wafer and the degree of acceleration of negative charges were experimentally estimated through the spatiotemporal characteristics of the net excitation rate of the short-lived Ar(2p1) used as a probe. A bias pulse operation with a single positive component at the wafer during the off-phase of very high frequency (100 MHz) plasma production resulted in the most efficient formation of the negatively-charged layer close to the wafer. The influence of the external plasma conditions on the negatively-charged layer is observed in detail.

Original languageEnglish
Pages (from-to)2223-2231
Number of pages9
JournalJournal of Physics D: Applied Physics
Volume37
Issue number16
DOIs
Publication statusPublished - 2004 Aug 21

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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