Negligible pure dephasing in InAs self-assembled quantum dots

Junko Hayase, Kouichi Akahane, Naokatsu Yamamoto, Mamiko Kujiraoka, Kazuhiro Ema, Masahide Sasaki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We measured the dephasing time and radiative lifetime of excitons in InAs quantum dots fabricated using the strain compensation technique. The dephasing time at 3 K was as long as 2.86ns using transient four-wave mixing measurements at an excitation wavelength of 1.468 μm. This ultralong dephasing time was due to the significant suppression of pure dephasing.

Original languageEnglish
Pages (from-to)6352-6354
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number9 B
DOIs
Publication statusPublished - 2007 Sep 20
Externally publishedYes

Fingerprint

Four wave mixing
Excitons
Semiconductor quantum dots
quantum dots
Wavelength
radiative lifetime
four-wave mixing
excitons
retarding
life (durability)
wavelengths
excitation
Compensation and Redress

Keywords

  • Coherent nonlinear spectroscopy
  • Dephasing
  • Exciton-phonon interaction
  • Quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Negligible pure dephasing in InAs self-assembled quantum dots. / Hayase, Junko; Akahane, Kouichi; Yamamoto, Naokatsu; Kujiraoka, Mamiko; Ema, Kazuhiro; Sasaki, Masahide.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 9 B, 20.09.2007, p. 6352-6354.

Research output: Contribution to journalArticle

Hayase, Junko ; Akahane, Kouichi ; Yamamoto, Naokatsu ; Kujiraoka, Mamiko ; Ema, Kazuhiro ; Sasaki, Masahide. / Negligible pure dephasing in InAs self-assembled quantum dots. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 9 B. pp. 6352-6354.
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