Neutral-impurity scattering in isotopically engineered Ge

Kohei M Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer, V. I. Ozhogin

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors.

Original languageEnglish
Pages (from-to)16995-17000
Number of pages6
JournalPhysical Review B
Volume50
Issue number23
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

neutron transmutation doping
Doping (additives)
Scattering
Impurities
impurities
Atoms
scattering
Phase shift
Hydrogen
hydrogen atoms
Neutrons
phase shift
Single crystals
Semiconductor materials
Temperature
Electrons
single crystals
atoms
electrons
Compensation and Redress

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Itoh, K. M., Walukiewicz, W., Fuchs, H. D., Beeman, J. W., Haller, E. E., Farmer, J. W., & Ozhogin, V. I. (1994). Neutral-impurity scattering in isotopically engineered Ge. Physical Review B, 50(23), 16995-17000. https://doi.org/10.1103/PhysRevB.50.16995

Neutral-impurity scattering in isotopically engineered Ge. / Itoh, Kohei M; Walukiewicz, W.; Fuchs, H. D.; Beeman, J. W.; Haller, E. E.; Farmer, J. W.; Ozhogin, V. I.

In: Physical Review B, Vol. 50, No. 23, 1994, p. 16995-17000.

Research output: Contribution to journalArticle

Itoh, KM, Walukiewicz, W, Fuchs, HD, Beeman, JW, Haller, EE, Farmer, JW & Ozhogin, VI 1994, 'Neutral-impurity scattering in isotopically engineered Ge', Physical Review B, vol. 50, no. 23, pp. 16995-17000. https://doi.org/10.1103/PhysRevB.50.16995
Itoh KM, Walukiewicz W, Fuchs HD, Beeman JW, Haller EE, Farmer JW et al. Neutral-impurity scattering in isotopically engineered Ge. Physical Review B. 1994;50(23):16995-17000. https://doi.org/10.1103/PhysRevB.50.16995
Itoh, Kohei M ; Walukiewicz, W. ; Fuchs, H. D. ; Beeman, J. W. ; Haller, E. E. ; Farmer, J. W. ; Ozhogin, V. I. / Neutral-impurity scattering in isotopically engineered Ge. In: Physical Review B. 1994 ; Vol. 50, No. 23. pp. 16995-17000.
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