Neutral-impurity scattering in isotopically engineered Ge

K. M. Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer, V. I. Ozhogin

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20 Citations (Scopus)

Abstract

Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors.

Original languageEnglish
Pages (from-to)16995-17000
Number of pages6
JournalPhysical Review B
Volume50
Issue number23
DOIs
Publication statusPublished - 1994 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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  • Cite this

    Itoh, K. M., Walukiewicz, W., Fuchs, H. D., Beeman, J. W., Haller, E. E., Farmer, J. W., & Ozhogin, V. I. (1994). Neutral-impurity scattering in isotopically engineered Ge. Physical Review B, 50(23), 16995-17000. https://doi.org/10.1103/PhysRevB.50.16995