Abstract
We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.
| Original language | English |
|---|---|
| Pages (from-to) | 2121-2123 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 64 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 1994 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Neutron transmutation doping of isotopically engineered Ge. / Itoh, Kohei M; Haller, E. E.; Hansen, W. L.; Beeman, J. W.; Farmer, J. W.; Rudnev, A.; Tikhomirov, A.; Ozhogin, V. I.
In: Applied Physics Letters, Vol. 64, No. 16, 1994, p. 2121-2123.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Neutron transmutation doping of isotopically engineered Ge
AU - Itoh, Kohei M
AU - Haller, E. E.
AU - Hansen, W. L.
AU - Beeman, J. W.
AU - Farmer, J. W.
AU - Rudnev, A.
AU - Tikhomirov, A.
AU - Ozhogin, V. I.
PY - 1994
Y1 - 1994
N2 - We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.
AB - We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.
UR - http://www.scopus.com/inward/record.url?scp=0000010652&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000010652&partnerID=8YFLogxK
U2 - 10.1063/1.111703
DO - 10.1063/1.111703
M3 - Article
AN - SCOPUS:0000010652
VL - 64
SP - 2121
EP - 2123
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
ER -