Neutron transmutation doping of isotopically engineered Ge

K. M. Itoh; E. E. Haller; W. L. Hansen; J. W. Beeman; J. W. Farmer; A. Rudnev; A. Tikhomirov; V. I. Ozhogin

doi:10.1063/1.111703

Neutron transmutation doping of isotopically engineered Ge

K. M. Itoh, E. E. Haller, W. L. Hansen, J. W. Beeman, J. W. Farmer, A. Rudnev, A. Tikhomirov, V. I. Ozhogin

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled ⁷⁴Ge/⁷⁰Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ ⁷⁴Ge]/[⁷⁰Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ ⁷⁴Ge]/[⁷⁰Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.

Original language	English
Pages (from-to)	2121-2123
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	16
DOIs	https://doi.org/10.1063/1.111703
Publication status	Published - 1994 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.",

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AU - Itoh, K. M.

AU - Haller, E. E.

AU - Hansen, W. L.

AU - Beeman, J. W.

AU - Farmer, J. W.

AU - Rudnev, A.

AU - Tikhomirov, A.

AU - Ozhogin, V. I.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.

AB - We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.

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Neutron transmutation doping of isotopically engineered Ge

Abstract

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