Neutron transmutation doping of isotopically engineered Ge

Kohei M Itoh, E. E. Haller, W. L. Hansen, J. W. Beeman, J. W. Farmer, A. Rudnev, A. Tikhomirov, V. I. Ozhogin

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.

Original languageEnglish
Pages (from-to)2121-2123
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number16
DOIs
Publication statusPublished - 1994
Externally publishedYes

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neutron transmutation doping
isotopes
single crystals
thermal neutrons
crystals
fluence
purity
impurities

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Itoh, K. M., Haller, E. E., Hansen, W. L., Beeman, J. W., Farmer, J. W., Rudnev, A., ... Ozhogin, V. I. (1994). Neutron transmutation doping of isotopically engineered Ge. Applied Physics Letters, 64(16), 2121-2123. https://doi.org/10.1063/1.111703

Neutron transmutation doping of isotopically engineered Ge. / Itoh, Kohei M; Haller, E. E.; Hansen, W. L.; Beeman, J. W.; Farmer, J. W.; Rudnev, A.; Tikhomirov, A.; Ozhogin, V. I.

In: Applied Physics Letters, Vol. 64, No. 16, 1994, p. 2121-2123.

Research output: Contribution to journalArticle

Itoh, KM, Haller, EE, Hansen, WL, Beeman, JW, Farmer, JW, Rudnev, A, Tikhomirov, A & Ozhogin, VI 1994, 'Neutron transmutation doping of isotopically engineered Ge', Applied Physics Letters, vol. 64, no. 16, pp. 2121-2123. https://doi.org/10.1063/1.111703
Itoh KM, Haller EE, Hansen WL, Beeman JW, Farmer JW, Rudnev A et al. Neutron transmutation doping of isotopically engineered Ge. Applied Physics Letters. 1994;64(16):2121-2123. https://doi.org/10.1063/1.111703
Itoh, Kohei M ; Haller, E. E. ; Hansen, W. L. ; Beeman, J. W. ; Farmer, J. W. ; Rudnev, A. ; Tikhomirov, A. ; Ozhogin, V. I. / Neutron transmutation doping of isotopically engineered Ge. In: Applied Physics Letters. 1994 ; Vol. 64, No. 16. pp. 2121-2123.
@article{90058d18e7d14ae3b3707a13045d5887,
title = "Neutron transmutation doping of isotopically engineered Ge",
abstract = "We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.",
author = "Itoh, {Kohei M} and Haller, {E. E.} and Hansen, {W. L.} and Beeman, {J. W.} and Farmer, {J. W.} and A. Rudnev and A. Tikhomirov and Ozhogin, {V. I.}",
year = "1994",
doi = "10.1063/1.111703",
language = "English",
volume = "64",
pages = "2121--2123",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Neutron transmutation doping of isotopically engineered Ge

AU - Itoh, Kohei M

AU - Haller, E. E.

AU - Hansen, W. L.

AU - Beeman, J. W.

AU - Farmer, J. W.

AU - Rudnev, A.

AU - Tikhomirov, A.

AU - Ozhogin, V. I.

PY - 1994

Y1 - 1994

N2 - We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.

AB - We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.

UR - http://www.scopus.com/inward/record.url?scp=0000010652&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000010652&partnerID=8YFLogxK

U2 - 10.1063/1.111703

DO - 10.1063/1.111703

M3 - Article

AN - SCOPUS:0000010652

VL - 64

SP - 2121

EP - 2123

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -