New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range

S. Ohkouchi; N. Kumagai; M. Shirane; Y. Igarashi; M. Nomura; Y. Ota; S. Yorozu; S. Iwamoto; Y. Arakawa

doi:10.1016/j.jcrysgro.2010.12.026

New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range

S. Ohkouchi, N. Kumagai, M. Shirane, Y. Igarashi, M. Nomura, Y. Ota, S. Yorozu, S. Iwamoto, Y. Arakawa

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485°C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423°C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources.

Original language	English
Pages (from-to)	250-253
Number of pages	4
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.12.026
Publication status	Published - 2011 May 15
Externally published	Yes

Keywords

GaAs
InAs
Molecular beam epitaxy
Nanostructures
Quantum dot

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.12.026

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New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range. / Ohkouchi, S.; Kumagai, N.; Shirane, M.; Igarashi, Y.; Nomura, M.; Ota, Y.; Yorozu, S.; Iwamoto, S.; Arakawa, Y.

In: Journal of Crystal Growth, Vol. 323, No. 1, 15.05.2011, p. 250-253.

Research output: Contribution to journal › Article › peer-review

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abstract = "We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485°C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423°C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources.",

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AU - Ohkouchi, S.

AU - Kumagai, N.

AU - Shirane, M.

AU - Igarashi, Y.

AU - Nomura, M.

AU - Ota, Y.

AU - Yorozu, S.

AU - Iwamoto, S.

AU - Arakawa, Y.

PY - 2011/5/15

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N2 - We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485°C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423°C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources.

AB - We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485°C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423°C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources.

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KW - InAs

KW - Molecular beam epitaxy

KW - Nanostructures

KW - Quantum dot

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New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range

Abstract

Keywords

ASJC Scopus subject areas

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