New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range

S. Ohkouchi, N. Kumagai, M. Shirane, Y. Igarashi, M. Nomura, Y. Ota, S. Yorozu, S. Iwamoto, Y. Arakawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485°C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423°C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources.

Original languageEnglish
Pages (from-to)250-253
Number of pages4
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
Publication statusPublished - 2011 May 15
Externally publishedYes

Keywords

  • GaAs
  • InAs
  • Molecular beam epitaxy
  • Nanostructures
  • Quantum dot

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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