New transverse-domain formation mechanism in a quarter-micrometre-gate HEMT

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have studied a quarter-micrometer-gate HEMT by a two-dimensional Mone Carlo particle simulation to gain a deeper insight into the device operation. A new transverse-domain formation due to intervalley electron transfer is predicted. The effect of domain formation on device performance and current saturation characteristics is also discussed.

Original languageEnglish
Pages (from-to)1315-1317
Number of pages3
JournalElectronics Letters
Volume24
Issue number21
Publication statusPublished - 1988 Jan 1
Externally publishedYes

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Gates (transistor)
High electron mobility transistors
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

New transverse-domain formation mechanism in a quarter-micrometre-gate HEMT. / Awano, Yuji.

In: Electronics Letters, Vol. 24, No. 21, 01.01.1988, p. 1315-1317.

Research output: Contribution to journalArticle

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