New Transverse-Domain Formation Mechanism In A Quarter-Micrometre-Gate Hemt

Y. Awano

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have studied a quarter-micrometre-gate HEMT by a two-dimensional Monte Carlo particle simulation to gain a deeper insight into the device operation. A new transversedomain formation due to intervalley electron transfer is predicted. The effect of domain formation on device performance and current saturation characteristics is also discussed.

Original languageEnglish
Pages (from-to)1315-1317
Number of pages3
JournalElectronics Letters
Volume24
Issue number21
DOIs
Publication statusPublished - 1988 Jan 1
Externally publishedYes

Keywords

  • Monte Carlo methods
  • Semiconductor devices and materials
  • Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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