Abstract
We have studied a quarter-micrometre-gate HEMT by a two-dimensional Monte Carlo particle simulation to gain a deeper insight into the device operation. A new transversedomain formation due to intervalley electron transfer is predicted. The effect of domain formation on device performance and current saturation characteristics is also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1315-1317 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 24 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 1988 Jan 1 |
| Externally published | Yes |
Keywords
- Monte Carlo methods
- Semiconductor devices and materials
- Transistors
ASJC Scopus subject areas
- Electrical and Electronic Engineering