We have studied a quarter-micrometer-gate HEMT by a two-dimensional Mone Carlo particle simulation to gain a deeper insight into the device operation. A new transverse-domain formation due to intervalley electron transfer is predicted. The effect of domain formation on device performance and current saturation characteristics is also discussed.
|Number of pages||3|
|Publication status||Published - 1988 Jan 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering