Abstract
An expandable Si bipolar 2.4Gbit/s throughput, 52Mbit/s 48-channel time-division switching LSI system is described. A high-throughput of 2.4Gbit/s and a power-dissipation of 5-3 W are achieved by adopting a low-voltage swing fourserial-gated differential bipolar circuit design and super selfaligned process (SST-1A) logic-in-memory LSI technology. This LSI is applicable to the digital video time-division switching and digital crossconnect systems of future B-ISDN.
| Original language | English |
|---|---|
| Pages (from-to) | 524-526 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 26 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1990 Jan 1 |
| Externally published | Yes |
Keywords
- Bipolar devices
- Circuit theory and design
- Large scale integration
- Silicon
ASJC Scopus subject areas
- Electrical and Electronic Engineering