Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

K. Iwata, P. Fons, A. Yamada, K. Matsubara, S. Niki

Research output: Contribution to journalConference article

174 Citations (Scopus)

Abstract

Nitrogen-doped ZnO layers were grown on sapphire substrates by radical source molecular beam epitaxy by simultaneously introducing O2 and N2 via a RF radical source. Reflection high-energy electron diffraction and X-ray diffraction measurements revealed that high N2/O2 flow ratios induced growth twins into the ZnO layer. A nitrogen-doped ZnO fabricated using a N2/O2 flow ratio of 10% was found to have a chemical nitrogen concentration of 1×1019 cm-3. However, type conversion from n-type to p-type did not occur while large nitrogen incorporation was observed to induce extended defects.

Original languageEnglish
Pages (from-to)526-531
Number of pages6
JournalJournal of Crystal Growth
Volume209
Issue number2-3
DOIs
Publication statusPublished - 2000 Feb
Externally publishedYes
EventThe 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn
Duration: 1999 Jul 281999 Jul 30

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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