Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

Kazuki Ito, Hiroshi Saito, Kento Sasaki, Hideyuki Watanabe, Tokuyuki Teraji, Kohei M Itoh, Eisuke Abe

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.

Original languageEnglish
Article number213105
JournalApplied Physics Letters
Volume110
Issue number21
DOIs
Publication statusPublished - 2017 May 22

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ion implantation
screening
diamonds
nitrogen
dosage
masks
etching
profiles
ions
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond. / Ito, Kazuki; Saito, Hiroshi; Sasaki, Kento; Watanabe, Hideyuki; Teraji, Tokuyuki; Itoh, Kohei M; Abe, Eisuke.

In: Applied Physics Letters, Vol. 110, No. 21, 213105, 22.05.2017.

Research output: Contribution to journalArticle

Ito, Kazuki ; Saito, Hiroshi ; Sasaki, Kento ; Watanabe, Hideyuki ; Teraji, Tokuyuki ; Itoh, Kohei M ; Abe, Eisuke. / Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond. In: Applied Physics Letters. 2017 ; Vol. 110, No. 21.
@article{3cd2621c00e448918c6d9c6f89b0c958,
title = "Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond",
abstract = "We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.",
author = "Kazuki Ito and Hiroshi Saito and Kento Sasaki and Hideyuki Watanabe and Tokuyuki Teraji and Itoh, {Kohei M} and Eisuke Abe",
year = "2017",
month = "5",
day = "22",
doi = "10.1063/1.4984060",
language = "English",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

AU - Ito, Kazuki

AU - Saito, Hiroshi

AU - Sasaki, Kento

AU - Watanabe, Hideyuki

AU - Teraji, Tokuyuki

AU - Itoh, Kohei M

AU - Abe, Eisuke

PY - 2017/5/22

Y1 - 2017/5/22

N2 - We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.

AB - We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.

UR - http://www.scopus.com/inward/record.url?scp=85019695339&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019695339&partnerID=8YFLogxK

U2 - 10.1063/1.4984060

DO - 10.1063/1.4984060

M3 - Article

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 213105

ER -