Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

Kazuki Ito, Hiroshi Saito, Kento Sasaki, Hideyuki Watanabe, Tokuyuki Teraji, Kohei M. Itoh, Eisuke Abe

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.

Original languageEnglish
Article number213105
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2017 May 22

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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