Non-stoichiometric SixN metal-oxide-semiconductor field-effect transistor for compact random number generator with 0.3 Mbit/s generation rate

Mari Matsumoto, Ryuji Ohba, Shin Ichi Yasuda, Ken Uchida, Tetsufumi Tanamoto, Shinobu Fujtta

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    The demand for random numbers for security applications is increasing. A conventional random number generator using thermal noise can generate unpredictable high-quality random numbers, but the circuit is extremely large because of large amplifier circuit for a small thermal signal. On the other hand, a pseudo-random number generator is small but the quality of randomness is bad. For a small circuit and a high quality of randomness, we purpose a non-stoichiometric SixN metal-oxide-semiconductor field-effect transistor (MOSFET) noise source device. This device generates a very large noise signal without an amplifier circuit. As a result, it is shown that, utilizing a SiN MOSFET, we can attain a compact random number generator with a high generation rate near 1 Mbit/s, which is suitable for almost all security applications.

    Original languageEnglish
    Pages (from-to)6191-6195
    Number of pages5
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume47
    Issue number8 PART 1
    DOIs
    Publication statusPublished - 2008 Aug 8

    Keywords

    • MOSFET
    • Network ubiquitous
    • Non-stoichiometric SiN
    • Random number generator
    • Security

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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