Non-stoichiometric SixN metal-oxide-semiconductor field-effect transistor for compact random number generator with 0.3 Mbit/s generation rate

Mari Matsumoto, Ryuji Ohba, Shin Ichi Yasuda, Ken Uchida, Tetsufumi Tanamoto, Shinobu Fujtta

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The demand for random numbers for security applications is increasing. A conventional random number generator using thermal noise can generate unpredictable high-quality random numbers, but the circuit is extremely large because of large amplifier circuit for a small thermal signal. On the other hand, a pseudo-random number generator is small but the quality of randomness is bad. For a small circuit and a high quality of randomness, we purpose a non-stoichiometric SixN metal-oxide-semiconductor field-effect transistor (MOSFET) noise source device. This device generates a very large noise signal without an amplifier circuit. As a result, it is shown that, utilizing a SiN MOSFET, we can attain a compact random number generator with a high generation rate near 1 Mbit/s, which is suitable for almost all security applications.

Original languageEnglish
Pages (from-to)6191-6195
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume47
Issue number8 PART 1
DOIs
Publication statusPublished - 2008 Aug 8

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Keywords

  • MOSFET
  • Network ubiquitous
  • Non-stoichiometric SiN
  • Random number generator
  • Security

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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