Non-volatile doubly stacked Si dot memory

R. Ohba, N. Sugiyama, Ken Uchida, J. Koga, S. Fujita, A. Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the Si dot memory, the realization of a long retention time is the most critical issue, since the tunnel oxide is very thin. So as to realize a long retention time without losing high-speed w/e in Si dot memory, we propose a novel Si dot memory whose floating gates are doubly stacked Si dots. A long retention time is possible, since the charge leak between the upper dots and the channel is suppressed due to quantum confinement and Coulomb blockade in the lower dot. Simultaneously, a high-speed w/e is possible, since the leak suppression is useful only in a low voltage region. Therefore, Si double dot memory is very promising for low-power non-volatile memory.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages56-57
Number of pages2
ISBN (Print)4891140313, 9784891140311
DOIs
Publication statusPublished - 2002
Externally publishedYes
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: 2002 Nov 62002 Nov 8

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period02/11/602/11/8

Fingerprint

Data storage equipment
Coulomb blockade
Quantum confinement
Tunnels
Oxides
Electric potential

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ohba, R., Sugiyama, N., Uchida, K., Koga, J., Fujita, S., & Toriumi, A. (2002). Non-volatile doubly stacked Si dot memory. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 56-57). [1178541] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178541

Non-volatile doubly stacked Si dot memory. / Ohba, R.; Sugiyama, N.; Uchida, Ken; Koga, J.; Fujita, S.; Toriumi, A.

2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 56-57 1178541.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohba, R, Sugiyama, N, Uchida, K, Koga, J, Fujita, S & Toriumi, A 2002, Non-volatile doubly stacked Si dot memory. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178541, Institute of Electrical and Electronics Engineers Inc., pp. 56-57, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 02/11/6. https://doi.org/10.1109/IMNC.2002.1178541
Ohba R, Sugiyama N, Uchida K, Koga J, Fujita S, Toriumi A. Non-volatile doubly stacked Si dot memory. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 56-57. 1178541 https://doi.org/10.1109/IMNC.2002.1178541
Ohba, R. ; Sugiyama, N. ; Uchida, Ken ; Koga, J. ; Fujita, S. ; Toriumi, A. / Non-volatile doubly stacked Si dot memory. 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 56-57
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