Non-volatile Si quantum memory with self-aligned doubly-stacked dots

R. Ohba, N. Sugiyama, Ken Uchida, J. Koga, A. Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Citations (Scopus)

Abstract

We investigate a novel Si quantum memory, in which floating gates are self-aligned doubly stacked Si dots. It is experimentally shown that the self-aligned double dot memory shows excellent charge retention. The retention improvement is explained by a theoretical model considering quantum confinement and Coulomb blockade in the lower Si dot. It is also shown that charge retention is improved remarkably by lower dot size scaling without losing high-speed write/erase.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages313-316
Number of pages4
Publication statusPublished - 2000
Externally publishedYes
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 2000 Dec 102000 Dec 13

Other

Other2000 IEEE International Electron Devices Meeting
CountryUnited States
CitySan Francisco, CA
Period00/12/1000/12/13

Fingerprint

Coulomb blockade
Data storage equipment
Quantum confinement

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ohba, R., Sugiyama, N., Uchida, K., Koga, J., & Toriumi, A. (2000). Non-volatile Si quantum memory with self-aligned doubly-stacked dots. In Technical Digest - International Electron Devices Meeting (pp. 313-316)

Non-volatile Si quantum memory with self-aligned doubly-stacked dots. / Ohba, R.; Sugiyama, N.; Uchida, Ken; Koga, J.; Toriumi, A.

Technical Digest - International Electron Devices Meeting. 2000. p. 313-316.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohba, R, Sugiyama, N, Uchida, K, Koga, J & Toriumi, A 2000, Non-volatile Si quantum memory with self-aligned doubly-stacked dots. in Technical Digest - International Electron Devices Meeting. pp. 313-316, 2000 IEEE International Electron Devices Meeting, San Francisco, CA, United States, 00/12/10.
Ohba R, Sugiyama N, Uchida K, Koga J, Toriumi A. Non-volatile Si quantum memory with self-aligned doubly-stacked dots. In Technical Digest - International Electron Devices Meeting. 2000. p. 313-316
Ohba, R. ; Sugiyama, N. ; Uchida, Ken ; Koga, J. ; Toriumi, A. / Non-volatile Si quantum memory with self-aligned doubly-stacked dots. Technical Digest - International Electron Devices Meeting. 2000. pp. 313-316
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