Non-volatile Si quantum memory with self-aligned doubly-stacked dots

R. Ohba, N. Sugiyama, K. Uchida, J. Koga, A. Toriumi

    Research output: Contribution to journalConference article

    22 Citations (Scopus)

    Abstract

    We investigate a novel Si quantum memory, in which floating gates are self-aligned doubly stacked Si dots. It is experimentally shown that the self-aligned double dot memory shows excellent charge retention. The retention improvement is explained by a theoretical model considering quantum confinement and Coulomb blockade in the lower Si dot. It is also shown that charge retention is improved remarkably by lower dot size scaling without losing high-speed write/erase.

    Original languageEnglish
    Pages (from-to)313-316
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting
    Publication statusPublished - 2000 Dec 1
    Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
    Duration: 2000 Dec 102000 Dec 13

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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