Nonadiabatic electron manipulation in quantum dot arrays

Keiji Saitou, Yosuke Kayanuma

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

A method of coherent manipulation of the electron tunneling in quantum dots is proposed, which utilizes the quantum interference in nonadiabatic double crossing of the discrete energy levels. In this method, we need only a smoothly varying gate voltage to manipulate electrons, without a sudden switching on and off. A systematic design of a smooth gate pulse is presented with a simple analytic formula to drive the two-level electronic state to essentially an arbitrary target state, and numerical simulations for complete transfer of an electron is shown for coupled double quantum dots and an array of quantum dots. Estimation of the manipulation time shows that the present method can be employed in realistic quantum dots.

Original languageEnglish
Article number201304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number20
DOIs
Publication statusPublished - 2004 Nov
Externally publishedYes

Fingerprint

Semiconductor quantum dots
manipulators
quantum dots
Electrons
electrons
Electron tunneling
electronic levels
Electronic states
electron tunneling
Electron energy levels
energy levels
interference
Computer simulation
Electric potential
electric potential
pulses
simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Nonadiabatic electron manipulation in quantum dot arrays. / Saitou, Keiji; Kayanuma, Yosuke.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, No. 20, 201304, 11.2004.

Research output: Contribution to journalArticle

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