Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy

Jiwang Yan, Tooru Asami, Tsunemoto Kuriyagawa

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

Laser micro-Raman spectroscopy was used to examine silicon wafers precision machined by diamond tools, and the results were compared with transmission electronic microscopic results. It was found that near-surface amorphous layers were generated by machining and there was a strong correlation between the thickness of the amorphous layer and the Raman intensity ratio of the amorphous phase to the crystalline phase. This finding provides the feasibility of a fast, inexpensive, nondestructive and quantitative measurement approach for subsurface damages of semiconductor materials by using laser micro-Raman spectroscopy. The effective measurement range was experimentally investigated and the sensing limits were theoretically discussed from the aspect of light scattering and light absorption with a double-layer material model.

Original languageEnglish
Pages (from-to)186-195
Number of pages10
JournalPrecision Engineering
Volume32
Issue number3
DOIs
Publication statusPublished - 2008 Jul
Externally publishedYes

Fingerprint

Raman spectroscopy
Machining
Single crystals
Silicon
Lasers
Silicon wafers
Light scattering
Light absorption
Diamonds
Semiconductor materials
Crystalline materials

Keywords

  • Amorphous
  • Ductile machining
  • Laser micro-Raman
  • Nondestructive evaluation
  • Phase transformation
  • Silicon
  • Subsurface damage
  • Ultraprecision machining

ASJC Scopus subject areas

  • Engineering(all)
  • Mechanical Engineering

Cite this

Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy. / Yan, Jiwang; Asami, Tooru; Kuriyagawa, Tsunemoto.

In: Precision Engineering, Vol. 32, No. 3, 07.2008, p. 186-195.

Research output: Contribution to journalArticle

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