Nonequilibrium plasmas for material processing in microelectronics

Z. Lj Petrovic, T. Makabe

Research output: Chapter in Book/Report/Conference proceedingChapter

6 Citations (Scopus)

Abstract

In this paper we give a brief review of applications of non equilibrium plasmas in material processing with a particular emphasis on applications for ultra large scale integrated (ULSI) circuit production. In particular we shall discuss the maintaining mechanisms in the two most generally applied techniques capacitively coupled plasmas (CCP) and inductively coupled plasmas (ICP). For CCP those mechanisms have been established only recently, while for the ICP, the whole range of plasma sustaining mechanisms has not been established yet. As an illustration of a good agreement between theoretical models and experimental data we discuss plasma etching in narrow-gap reactive ion etcher (RIE) filled with SF6.

Original languageEnglish
Title of host publicationMaterials Science Forum
EditorsDragan P. Uskoković, Slobodan K. Milonjić, Dejan I. Rakovic
PublisherTrans Tech Publications Ltd
Pages47-56
Number of pages10
ISBN (Print)9780878498123
DOIs
Publication statusPublished - 1998 Jan 1

Publication series

NameMaterials Science Forum
Volume282-283
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Keywords

  • Capacitively Coupled Plasma
  • Inductively Coupled Plasma
  • Ionization
  • Plasma Chemistry
  • Plasma Deposition
  • Plasma Etching
  • Rf Discharges
  • Thin Films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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