Nonequilibrium plasmas for material processing in microelectronics

Z. Lj Petrovic, T. Makabe

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper we give a brief review of applications of non equilibrium plasmas in material processing with a particular emphasis on applications for ultra large scale integrated (ULSI) circuit production. In particular we shall discuss the maintaining mechanisms in the two most generally applied techniques capacitively coupled plasmas (CCP) and inductively coupled plasmas (ICP). For CCP those mechanisms have been established only recently, while for the ICP, the whole range of plasma sustaining mechanisms has not been established yet. As an illustration of a good agreement between theoretical models and experimental data we discuss plasma etching in narrow-gap reactive ion etcher (RIE) filled with SF6.

Original languageEnglish
Pages (from-to)47-56
Number of pages10
JournalMaterials Science Forum
Volume282-283
Publication statusPublished - 1998

Fingerprint

nonequilibrium plasmas
microelectronics
Microelectronics
Plasmas
Inductively coupled plasma
Processing
Plasma etching
sustaining
Integrated circuits
plasma etching
integrated circuits
Ions
ions

Keywords

  • Capacitively Coupled Plasma
  • Inductively Coupled Plasma
  • Ionization
  • Plasma Chemistry
  • Plasma Deposition
  • Plasma Etching
  • Rf Discharges
  • Thin Films

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Nonequilibrium plasmas for material processing in microelectronics. / Petrovic, Z. Lj; Makabe, T.

In: Materials Science Forum, Vol. 282-283, 1998, p. 47-56.

Research output: Contribution to journalArticle

Petrovic, ZL & Makabe, T 1998, 'Nonequilibrium plasmas for material processing in microelectronics', Materials Science Forum, vol. 282-283, pp. 47-56.
Petrovic, Z. Lj ; Makabe, T. / Nonequilibrium plasmas for material processing in microelectronics. In: Materials Science Forum. 1998 ; Vol. 282-283. pp. 47-56.
@article{539e0e5e634844ad8cf38d558b8e5cef,
title = "Nonequilibrium plasmas for material processing in microelectronics",
abstract = "In this paper we give a brief review of applications of non equilibrium plasmas in material processing with a particular emphasis on applications for ultra large scale integrated (ULSI) circuit production. In particular we shall discuss the maintaining mechanisms in the two most generally applied techniques capacitively coupled plasmas (CCP) and inductively coupled plasmas (ICP). For CCP those mechanisms have been established only recently, while for the ICP, the whole range of plasma sustaining mechanisms has not been established yet. As an illustration of a good agreement between theoretical models and experimental data we discuss plasma etching in narrow-gap reactive ion etcher (RIE) filled with SF6.",
keywords = "Capacitively Coupled Plasma, Inductively Coupled Plasma, Ionization, Plasma Chemistry, Plasma Deposition, Plasma Etching, Rf Discharges, Thin Films",
author = "Petrovic, {Z. Lj} and T. Makabe",
year = "1998",
language = "English",
volume = "282-283",
pages = "47--56",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Nonequilibrium plasmas for material processing in microelectronics

AU - Petrovic, Z. Lj

AU - Makabe, T.

PY - 1998

Y1 - 1998

N2 - In this paper we give a brief review of applications of non equilibrium plasmas in material processing with a particular emphasis on applications for ultra large scale integrated (ULSI) circuit production. In particular we shall discuss the maintaining mechanisms in the two most generally applied techniques capacitively coupled plasmas (CCP) and inductively coupled plasmas (ICP). For CCP those mechanisms have been established only recently, while for the ICP, the whole range of plasma sustaining mechanisms has not been established yet. As an illustration of a good agreement between theoretical models and experimental data we discuss plasma etching in narrow-gap reactive ion etcher (RIE) filled with SF6.

AB - In this paper we give a brief review of applications of non equilibrium plasmas in material processing with a particular emphasis on applications for ultra large scale integrated (ULSI) circuit production. In particular we shall discuss the maintaining mechanisms in the two most generally applied techniques capacitively coupled plasmas (CCP) and inductively coupled plasmas (ICP). For CCP those mechanisms have been established only recently, while for the ICP, the whole range of plasma sustaining mechanisms has not been established yet. As an illustration of a good agreement between theoretical models and experimental data we discuss plasma etching in narrow-gap reactive ion etcher (RIE) filled with SF6.

KW - Capacitively Coupled Plasma

KW - Inductively Coupled Plasma

KW - Ionization

KW - Plasma Chemistry

KW - Plasma Deposition

KW - Plasma Etching

KW - Rf Discharges

KW - Thin Films

UR - http://www.scopus.com/inward/record.url?scp=0007364076&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0007364076&partnerID=8YFLogxK

M3 - Article

VL - 282-283

SP - 47

EP - 56

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -