Nonequilibrium radio frequency plasma interacting with a surface

Toshiaki Makabe, Takashi Yagisawa

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this paper, we discuss the successive results of our series of investigations into a two-frequency capacitively coupled plasma in CF 4(5%)/Ar, sustained by a very high frequency source and biased by a low frequency source in a collision-dominated region. The nonequilibrium in a collisional radiofrequency plasma is studied in terms of the velocity distribution of charged particles. In the bulk plasma, especially, we discuss the velocity distribution of electrons influenced by the quantum structure of a feed gas molecule, and in the passive ion sheath, we predict the flux velocity distribution of positive ions. We then investigate the active species interacting with a patterned SiO2 wafer surface and predict each species' contribution to the feature profile, and discuss the relationship between the pattern size and the etch rate.

Original languageEnglish
Article number014016
JournalPlasma Sources Science and Technology
Volume18
Issue number1
DOIs
Publication statusPublished - 2009

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radio frequencies
velocity distribution
ion sheaths
collisional plasmas
very high frequencies
positive ions
charged particles
wafers
low frequencies
collisions
profiles
gases
molecules
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Nonequilibrium radio frequency plasma interacting with a surface. / Makabe, Toshiaki; Yagisawa, Takashi.

In: Plasma Sources Science and Technology, Vol. 18, No. 1, 014016, 2009.

Research output: Contribution to journalArticle

Makabe, Toshiaki ; Yagisawa, Takashi. / Nonequilibrium radio frequency plasma interacting with a surface. In: Plasma Sources Science and Technology. 2009 ; Vol. 18, No. 1.
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