Nonequilibrium transport properties through parallel quantum dots

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7 Citations (Scopus)

Abstract

Nonequilibrium transport properties through parallel metallic dots are studied theoretically to elucidate the interdot charging effect. The current and its fluctuation are calculated, as functions of the gate and bias voltages, by solving a master equation numerically and by performing a Monte Carlo simulation. A two-dot system shows a new structure of the Coulomb oscillation owing to the interplay between regular and irregular transport processes. In long arrays of dots, a "crystallization" of charges is observed as a large enhancement of the current fluctuation in which charges are accumulated at every other dot.

Original languageEnglish
Pages (from-to)4004-4007
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number6 SUPPL. B
Publication statusPublished - 1997 Jun

Fingerprint

Bias voltage
Transport properties
Semiconductor quantum dots
Crystallization
transport properties
quantum dots
charging
crystallization
oscillations
augmentation
electric potential
simulation
Monte Carlo simulation

Keywords

  • Coulomb blockade
  • Coulomb oscillation
  • Current noise
  • Master equation
  • Monte Carlo
  • Nonequilibrium transport
  • Quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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AB - Nonequilibrium transport properties through parallel metallic dots are studied theoretically to elucidate the interdot charging effect. The current and its fluctuation are calculated, as functions of the gate and bias voltages, by solving a master equation numerically and by performing a Monte Carlo simulation. A two-dot system shows a new structure of the Coulomb oscillation owing to the interplay between regular and irregular transport processes. In long arrays of dots, a "crystallization" of charges is observed as a large enhancement of the current fluctuation in which charges are accumulated at every other dot.

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