Novel modification method of sol-gel thin films - Densification of silica gel films with electronic excitation

Hiroaki Imai, Hiroshi Hirashima, Koichi Awazu, Hideo Onuki

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Significant structural changes in silica gel films with synchrotron radiation (SR) and energetic He+ ions have been found. Irradiation with photons in the energy range higher than approximately 8 eV and 100-keV He+ ions induce an increase in refractive index and a decrease in thickness of silica gel films. Fourier transform infrared absorption spectra indicate that irradiation with the photons and the ions reduces the Si-OH content and the average Si-O-Si bridging angle. Electronic excitation with energetic photons is suggested to induce atomic rearrangement which causes densification of silica gel. Structural changes with He+ implantation is also tentatively ascribed to an electronic process. Electronic processes using SR and light ion implantation are anticipated to offer an alternative route to prepare dense thin films derived from sol-gel method.

Original languageEnglish
Pages (from-to)1094-1096
Number of pages3
JournalNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
Volume102
Publication statusPublished - 1994 Nov

Fingerprint

Silica Gel
Silica gel
silica gel
densification
Densification
Sol-gels
Photons
gels
Ions
Synchrotron radiation
Thin films
synchrotron radiation
photons
thin films
electronics
Irradiation
excitation
ions
irradiation
light ions

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Novel modification method of sol-gel thin films - Densification of silica gel films with electronic excitation. / Imai, Hiroaki; Hirashima, Hiroshi; Awazu, Koichi; Onuki, Hideo.

In: Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan, Vol. 102, 11.1994, p. 1094-1096.

Research output: Contribution to journalArticle

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