Novel prevention method of stiction using silicon anodization for SOI structure

Yoshinori Matsumoto, T. Shimada, M. Ishida

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Silicon anodization process has been applied to prevent both 'after-rinse stiction' and 'in-use stiction' for the sensors with SOI structure. The anodization process roughened the silicon surface causing hillocks of a few tens of nanometer in height and a few hundreds of nanometer in diameter, resulting in increment of water contact angle above 100° as expected from a theory of fractal structure. Prevention effect for 'after-rinse stiction' was evaluated with silicon cantilever beam array fabricated by SOI structure. The maximum detachment length became three times longer than that of the beam on usual silicon surface. The roughening of silicon surface reduces the actual contact area, and hence, it is effective in preventing 'in-use stiction'. The anodization process was also performed using 73% HF solution without causing attack for aluminum metallization.

Original languageEnglish
Pages (from-to)153-159
Number of pages7
JournalSensors and Actuators, A: Physical
Volume72
Issue number2
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

stiction
Stiction
SOI (semiconductors)
Silicon
silicon
cantilever beams
Cantilever beams
Metallizing
Aluminum
detachment
Fractals
attack
Contact angle
fractals
aluminum
Water
sensors
Sensors
water

Keywords

  • 73% HF
  • Fractal
  • Silicon anodization
  • SOI
  • Stiction
  • Water contact angle

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

Cite this

Novel prevention method of stiction using silicon anodization for SOI structure. / Matsumoto, Yoshinori; Shimada, T.; Ishida, M.

In: Sensors and Actuators, A: Physical, Vol. 72, No. 2, 1999, p. 153-159.

Research output: Contribution to journalArticle

@article{a753756e0df54d94bad4623caa0c98d7,
title = "Novel prevention method of stiction using silicon anodization for SOI structure",
abstract = "Silicon anodization process has been applied to prevent both 'after-rinse stiction' and 'in-use stiction' for the sensors with SOI structure. The anodization process roughened the silicon surface causing hillocks of a few tens of nanometer in height and a few hundreds of nanometer in diameter, resulting in increment of water contact angle above 100° as expected from a theory of fractal structure. Prevention effect for 'after-rinse stiction' was evaluated with silicon cantilever beam array fabricated by SOI structure. The maximum detachment length became three times longer than that of the beam on usual silicon surface. The roughening of silicon surface reduces the actual contact area, and hence, it is effective in preventing 'in-use stiction'. The anodization process was also performed using 73{\%} HF solution without causing attack for aluminum metallization.",
keywords = "73{\%} HF, Fractal, Silicon anodization, SOI, Stiction, Water contact angle",
author = "Yoshinori Matsumoto and T. Shimada and M. Ishida",
year = "1999",
language = "English",
volume = "72",
pages = "153--159",
journal = "Sensors and Actuators, A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Novel prevention method of stiction using silicon anodization for SOI structure

AU - Matsumoto, Yoshinori

AU - Shimada, T.

AU - Ishida, M.

PY - 1999

Y1 - 1999

N2 - Silicon anodization process has been applied to prevent both 'after-rinse stiction' and 'in-use stiction' for the sensors with SOI structure. The anodization process roughened the silicon surface causing hillocks of a few tens of nanometer in height and a few hundreds of nanometer in diameter, resulting in increment of water contact angle above 100° as expected from a theory of fractal structure. Prevention effect for 'after-rinse stiction' was evaluated with silicon cantilever beam array fabricated by SOI structure. The maximum detachment length became three times longer than that of the beam on usual silicon surface. The roughening of silicon surface reduces the actual contact area, and hence, it is effective in preventing 'in-use stiction'. The anodization process was also performed using 73% HF solution without causing attack for aluminum metallization.

AB - Silicon anodization process has been applied to prevent both 'after-rinse stiction' and 'in-use stiction' for the sensors with SOI structure. The anodization process roughened the silicon surface causing hillocks of a few tens of nanometer in height and a few hundreds of nanometer in diameter, resulting in increment of water contact angle above 100° as expected from a theory of fractal structure. Prevention effect for 'after-rinse stiction' was evaluated with silicon cantilever beam array fabricated by SOI structure. The maximum detachment length became three times longer than that of the beam on usual silicon surface. The roughening of silicon surface reduces the actual contact area, and hence, it is effective in preventing 'in-use stiction'. The anodization process was also performed using 73% HF solution without causing attack for aluminum metallization.

KW - 73% HF

KW - Fractal

KW - Silicon anodization

KW - SOI

KW - Stiction

KW - Water contact angle

UR - http://www.scopus.com/inward/record.url?scp=0032714562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032714562&partnerID=8YFLogxK

M3 - Article

VL - 72

SP - 153

EP - 159

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - 2

ER -