Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors

Takahisa Tanaka, Ken Uchida

Research output: Contribution to journalArticle

Abstract

Band tails in heavily doped semiconductors are one of the important parameters that determine transfer characteristics of tunneling field-effect transistors. In this study, doping concentration and doing profile dependences of band tails in heavily doped Si nanowires were analyzed by a nonequilibrium Green function method. From the calculated band tails, transfer characteristics of nanowire tunnel field-effect transistors were numerically analyzed by Wentzel-Kramer-Brillouin approximation with exponential barriers. The calculated transfer characteristics demonstrate that the band tails induced by dopants degrade the subthreshold slopes of Si nanowires from 5 to 56mV/dec in the worst case. On the other hand, surface doping leads to a high drain current while maintaining a small subthreshold slope.

Original languageEnglish
Article number06HC04
JournalJapanese Journal of Applied Physics
Volume57
Issue number6
DOIs
Publication statusPublished - 2018 Jun 1

Fingerprint

Field effect transistors
Nanowires
numerical analysis
Numerical analysis
nanowires
field effect transistors
Doping (additives)
Drain current
slopes
Green's function
Tunnels
Semiconductor materials
high current
tunnels
Green's functions
profiles
approximation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors. / Tanaka, Takahisa; Uchida, Ken.

In: Japanese Journal of Applied Physics, Vol. 57, No. 6, 06HC04, 01.06.2018.

Research output: Contribution to journalArticle

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