Numerical analysis of the production profile of H0 atoms and subsequent H- ions in large negative ion sources

N. Takado, H. Tobari, T. Inoue, J. Hanatani, Akiyoshi Hatayama, M. Hanada, M. Kashiwagi, K. Sakamoto

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The production and transport processes of H0 atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under the Cs-seeded condition to obtain a spatial distribution of surface-produced H- ions. In this analysis, the amount of H0 atoms produced through dissociation processes of H2 molecules is calculated from the electron temperature and density obtained by Langmuir probe measurements. The high-energy tail of electrons, which greatly affects H0 atom production, is taken into account by fitting a single-probe characteristic as a two-temperature Maxwellian distribution. In the H0 atom transport process, the energy relaxation of the H0 atoms, which affects the surface H- ion production rate, is taken into account. The result indicates that the surface H- ion production is enhanced near the high-electron-temperature region where H0 atom production is localized.

Original languageEnglish
Article number053302
JournalJournal of Applied Physics
Volume103
Issue number5
DOIs
Publication statusPublished - 2008

Fingerprint

negative ions
ion sources
numerical analysis
profiles
atoms
ions
ion production rates
electron energy
Maxwell-Boltzmann density function
electrostatic probes
spatial distribution
dissociation
energy
probes
molecules
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Takado, N., Tobari, H., Inoue, T., Hanatani, J., Hatayama, A., Hanada, M., ... Sakamoto, K. (2008). Numerical analysis of the production profile of H0 atoms and subsequent H- ions in large negative ion sources. Journal of Applied Physics, 103(5), [053302]. https://doi.org/10.1063/1.2887996

Numerical analysis of the production profile of H0 atoms and subsequent H- ions in large negative ion sources. / Takado, N.; Tobari, H.; Inoue, T.; Hanatani, J.; Hatayama, Akiyoshi; Hanada, M.; Kashiwagi, M.; Sakamoto, K.

In: Journal of Applied Physics, Vol. 103, No. 5, 053302, 2008.

Research output: Contribution to journalArticle

Takado, N, Tobari, H, Inoue, T, Hanatani, J, Hatayama, A, Hanada, M, Kashiwagi, M & Sakamoto, K 2008, 'Numerical analysis of the production profile of H0 atoms and subsequent H- ions in large negative ion sources', Journal of Applied Physics, vol. 103, no. 5, 053302. https://doi.org/10.1063/1.2887996
Takado, N. ; Tobari, H. ; Inoue, T. ; Hanatani, J. ; Hatayama, Akiyoshi ; Hanada, M. ; Kashiwagi, M. ; Sakamoto, K. / Numerical analysis of the production profile of H0 atoms and subsequent H- ions in large negative ion sources. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 5.
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AU - Hanada, M.

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