TY - JOUR
T1 - Numerical analysis of the production profile of H0 atoms and subsequent H- ions in large negative ion sources
AU - Takado, N.
AU - Tobari, H.
AU - Inoue, T.
AU - Hanatani, J.
AU - Hatayama, A.
AU - Hanada, M.
AU - Kashiwagi, M.
AU - Sakamoto, K.
N1 - Funding Information:
This work was partly carried out while the first author (N.T.) was at the Japan Atomic Energy Agency (Mukouyama, Naka, Japan). A part of this work was supported by a Grant-in-Aid for Scientific Research from the Japan Science and Technology Agency.
PY - 2008
Y1 - 2008
N2 - The production and transport processes of H0 atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under the Cs-seeded condition to obtain a spatial distribution of surface-produced H- ions. In this analysis, the amount of H0 atoms produced through dissociation processes of H2 molecules is calculated from the electron temperature and density obtained by Langmuir probe measurements. The high-energy tail of electrons, which greatly affects H0 atom production, is taken into account by fitting a single-probe characteristic as a two-temperature Maxwellian distribution. In the H0 atom transport process, the energy relaxation of the H0 atoms, which affects the surface H- ion production rate, is taken into account. The result indicates that the surface H- ion production is enhanced near the high-electron-temperature region where H0 atom production is localized.
AB - The production and transport processes of H0 atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under the Cs-seeded condition to obtain a spatial distribution of surface-produced H- ions. In this analysis, the amount of H0 atoms produced through dissociation processes of H2 molecules is calculated from the electron temperature and density obtained by Langmuir probe measurements. The high-energy tail of electrons, which greatly affects H0 atom production, is taken into account by fitting a single-probe characteristic as a two-temperature Maxwellian distribution. In the H0 atom transport process, the energy relaxation of the H0 atoms, which affects the surface H- ion production rate, is taken into account. The result indicates that the surface H- ion production is enhanced near the high-electron-temperature region where H0 atom production is localized.
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U2 - 10.1063/1.2887996
DO - 10.1063/1.2887996
M3 - Article
AN - SCOPUS:40849106714
SN - 0021-8979
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 5
M1 - 053302
ER -