Numerical analysis of the production profile of H0 atoms and subsequent H- ions in large negative ion sources

N. Takado, H. Tobari, T. Inoue, J. Hanatani, Akiyoshi Hatayama, M. Hanada, M. Kashiwagi, K. Sakamoto

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Abstract

The production and transport processes of H0 atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under the Cs-seeded condition to obtain a spatial distribution of surface-produced H- ions. In this analysis, the amount of H0 atoms produced through dissociation processes of H2 molecules is calculated from the electron temperature and density obtained by Langmuir probe measurements. The high-energy tail of electrons, which greatly affects H0 atom production, is taken into account by fitting a single-probe characteristic as a two-temperature Maxwellian distribution. In the H0 atom transport process, the energy relaxation of the H0 atoms, which affects the surface H- ion production rate, is taken into account. The result indicates that the surface H- ion production is enhanced near the high-electron-temperature region where H0 atom production is localized.

Original languageEnglish
Article number053302
JournalJournal of Applied Physics
Volume103
Issue number5
DOIs
Publication statusPublished - 2008

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Takado, N., Tobari, H., Inoue, T., Hanatani, J., Hatayama, A., Hanada, M., Kashiwagi, M., & Sakamoto, K. (2008). Numerical analysis of the production profile of H0 atoms and subsequent H- ions in large negative ion sources. Journal of Applied Physics, 103(5), [053302]. https://doi.org/10.1063/1.2887996