Numerical simulation of the effect of Cs volume reaction in an [formula omitted] ion source

M. Ogasawara, T. Morishita, M. Miura, N. Shibayama, A. Hatayama

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Effects of cesium related reactions are investigated using a simulation code for [formula omitted] ion sources. Effects begin to appear when cesium density is [formula omitted] but are still small and become large when the cesium density is greater than [formula omitted] The [formula omitted] density decreases due to electron detachment. Decreasing the plasma potential by cesium seeding results in 12% smaller [formula omitted] density. The minimum of the plasma potential shown experimentally by Bacal is found to correspond to a cesium coverage of 50% with the use of Langmuir adsorption isotherm. Surface production is effective only when the cesium density is around [formula omitted] For cesium density greater than [formula omitted] the effect of the cesium related volume reaction becomes larger.

Original languageEnglish
Pages (from-to)1132-1134
Number of pages3
JournalReview of Scientific Instruments
Volume69
Issue number2
DOIs
Publication statusPublished - 1998 Feb

ASJC Scopus subject areas

  • Instrumentation

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