Numerical simulation study of electrostatically defined silicon double quantum dot device

Muhammad Amin Sulthoni, Tetsuo Kodera, Ken Uchida, Shunri Oda

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Coupled quantum dots are of great interest for the application of quantum computing. The aspect needing attention is the preparation of well-defined quantum dots with small sizes and interdot distances. We propose a novel electrostatics method to form silicon double quantum dots. Three-dimensional numerical simulations were used to confirm the concept and study the mechanism controlling the tunnel barrier using the side gates. We estimate the electron number in each quantum dot to be less than five electrons. The prospect in creating ultrasmall quantum dots that operate at the few-electron regime, as well as exhibit processing simplicity is the great advantage of this method over those previously reported.

Original languageEnglish
Article number054511
JournalJournal of Applied Physics
Volume110
Issue number5
DOIs
Publication statusPublished - 2011 Sep 1
Externally publishedYes

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quantum dots
silicon
simulation
electrons
quantum computation
tunnels
electrostatics
preparation
estimates

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Numerical simulation study of electrostatically defined silicon double quantum dot device. / Sulthoni, Muhammad Amin; Kodera, Tetsuo; Uchida, Ken; Oda, Shunri.

In: Journal of Applied Physics, Vol. 110, No. 5, 054511, 01.09.2011.

Research output: Contribution to journalArticle

Sulthoni, Muhammad Amin ; Kodera, Tetsuo ; Uchida, Ken ; Oda, Shunri. / Numerical simulation study of electrostatically defined silicon double quantum dot device. In: Journal of Applied Physics. 2011 ; Vol. 110, No. 5.
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