Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM)

Teppei Kawanabe; Akio Kawabata; Torno Murakami; Mizuhisa Nihei; Yuji Awano

doi:10.1109/IITC.2013.6615581

Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM)

Teppei Kawanabe, Akio Kawabata, Torno Murakami, Mizuhisa Nihei, Yuji Awano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We report numerical simulations of heat dissipation properties of nano-carbon through silicon via (TSV), thermal interface material (TIM), and chip package towards a high heat dissipation LSI 3-D packaging. By using vertically aligned multi-walled CNTs (MWNTs) as both TSV and TIM materials and graphite as chip package, a boundary temperature just under a heat source decreased 40.8K in total, comparing to that using conventional materials. This result suggests superior heat dissipation properties of nano-carbon 3-D packaging.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013
DOIs	https://doi.org/10.1109/IITC.2013.6615581
Publication status	Published - 2013 Nov 4
Event	2013 16th IEEE International Interconnect Technology Conference, IITC 2013 - Kyoto, Japan Duration: 2013 Jun 13 → 2013 Jun 15

Publication series

Name	Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013

Other

Other	2013 16th IEEE International Interconnect Technology Conference, IITC 2013
Country/Territory	Japan
City	Kyoto
Period	13/6/13 → 13/6/15

ASJC Scopus subject areas

Hardware and Architecture
Control and Systems Engineering

Access to Document

10.1109/IITC.2013.6615581

Cite this

Kawanabe, T., Kawabata, A., Murakami, T., Nihei, M., & Awano, Y. (2013). Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM). In Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013 [6615581] (Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013). https://doi.org/10.1109/IITC.2013.6615581

Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM). / Kawanabe, Teppei; Kawabata, Akio; Murakami, Torno et al.
Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013. 2013. 6615581 (Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawanabe, T, Kawabata, A, Murakami, T, Nihei, M & Awano, Y 2013, Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM). in Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013., 6615581, Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013, 2013 16th IEEE International Interconnect Technology Conference, IITC 2013, Kyoto, Japan, 13/6/13. https://doi.org/10.1109/IITC.2013.6615581

Kawanabe T, Kawabata A, Murakami T, Nihei M, Awano Y. Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM). In Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013. 2013. 6615581. (Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013). doi: 10.1109/IITC.2013.6615581

Kawanabe, Teppei ; Kawabata, Akio ; Murakami, Torno et al. / Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM). Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013. 2013. (Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013).

@inproceedings{e28a9f35c82c466ab0cd5fdee2f3f795,

title = "Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM)",

abstract = "We report numerical simulations of heat dissipation properties of nano-carbon through silicon via (TSV), thermal interface material (TIM), and chip package towards a high heat dissipation LSI 3-D packaging. By using vertically aligned multi-walled CNTs (MWNTs) as both TSV and TIM materials and graphite as chip package, a boundary temperature just under a heat source decreased 40.8K in total, comparing to that using conventional materials. This result suggests superior heat dissipation properties of nano-carbon 3-D packaging.",

author = "Teppei Kawanabe and Akio Kawabata and Torno Murakami and Mizuhisa Nihei and Yuji Awano",

year = "2013",

month = nov,

day = "4",

doi = "10.1109/IITC.2013.6615581",

language = "English",

isbn = "9781479904396",

series = "Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013",

booktitle = "Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013",

note = "2013 16th IEEE International Interconnect Technology Conference, IITC 2013 ; Conference date: 13-06-2013 Through 15-06-2013",

}

TY - GEN

T1 - Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM)

AU - Kawanabe, Teppei

AU - Kawabata, Akio

AU - Murakami, Torno

AU - Nihei, Mizuhisa

AU - Awano, Yuji

PY - 2013/11/4

Y1 - 2013/11/4

N2 - We report numerical simulations of heat dissipation properties of nano-carbon through silicon via (TSV), thermal interface material (TIM), and chip package towards a high heat dissipation LSI 3-D packaging. By using vertically aligned multi-walled CNTs (MWNTs) as both TSV and TIM materials and graphite as chip package, a boundary temperature just under a heat source decreased 40.8K in total, comparing to that using conventional materials. This result suggests superior heat dissipation properties of nano-carbon 3-D packaging.

AB - We report numerical simulations of heat dissipation properties of nano-carbon through silicon via (TSV), thermal interface material (TIM), and chip package towards a high heat dissipation LSI 3-D packaging. By using vertically aligned multi-walled CNTs (MWNTs) as both TSV and TIM materials and graphite as chip package, a boundary temperature just under a heat source decreased 40.8K in total, comparing to that using conventional materials. This result suggests superior heat dissipation properties of nano-carbon 3-D packaging.

UR - http://www.scopus.com/inward/record.url?scp=84886689104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886689104&partnerID=8YFLogxK

U2 - 10.1109/IITC.2013.6615581

DO - 10.1109/IITC.2013.6615581

M3 - Conference contribution

AN - SCOPUS:84886689104

SN - 9781479904396

T3 - Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013

BT - Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013

T2 - 2013 16th IEEE International Interconnect Technology Conference, IITC 2013

Y2 - 13 June 2013 through 15 June 2013

ER -

Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM)

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this