Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM)

Teppei Kawanabe, Akio Kawabata, Torno Murakami, Mizuhisa Nihei, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We report numerical simulations of heat dissipation properties of nano-carbon through silicon via (TSV), thermal interface material (TIM), and chip package towards a high heat dissipation LSI 3-D packaging. By using vertically aligned multi-walled CNTs (MWNTs) as both TSV and TIM materials and graphite as chip package, a boundary temperature just under a heat source decreased 40.8K in total, comparing to that using conventional materials. This result suggests superior heat dissipation properties of nano-carbon 3-D packaging.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013
DOIs
Publication statusPublished - 2013 Nov 4
Event2013 16th IEEE International Interconnect Technology Conference, IITC 2013 - Kyoto, Japan
Duration: 2013 Jun 132013 Jun 15

Publication series

NameProceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013

Other

Other2013 16th IEEE International Interconnect Technology Conference, IITC 2013
CountryJapan
CityKyoto
Period13/6/1313/6/15

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Control and Systems Engineering

Cite this

Kawanabe, T., Kawabata, A., Murakami, T., Nihei, M., & Awano, Y. (2013). Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM). In Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013 [6615581] (Proceedings of the 2013 IEEE International Interconnect Technology Conference, IITC 2013). https://doi.org/10.1109/IITC.2013.6615581