Numerical study of C-V characteristics of double-gate ultrathin SOI MOSFETs

Hiroshi Watanabe, Ken Uchida, Atsuhiro Kinoshita

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)


    Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrödinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n+poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport.

    Original languageEnglish
    Pages (from-to)52-58
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Issue number1
    Publication statusPublished - 2007 Jan


    • Confinement
    • Double-gate
    • MOS devices
    • Silicon-on-insulator (SOI)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering


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