Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy

Mitsuo Takahashi, Akihiro Moto, So Tanaka, Tatsuya Tanabe, Shigenori Takagishi, Kouichi Karatani, Masaaki Nakayama, Kazunari Matsuda, Toshiharu Saiki

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Photoluminescence (PL) spectra and scanning near-field optical microscope (SNOM) images have been measured at low temperature to investigate the compositional fluctuations in GaNxAs1-x epilayers grown on GaAs by metalorganic vapor-phase epitaxy. Time-resolved PL has been employed to study the optical transitions and their dynamic processes. Our results suggest that the PL emission from GaNxAs1-x epilayer at low temperature is dominated by localized exciton recombination induced by compositional fluctuations. Furthermore, we directly observed the distribution of the compositional inhomogeneity in the GaNxAs1-x samples even with a small N-content of 0.5% by measuring SNOM images. The emission spot size of less than 1 μm is estimated for the GaNxAs1-x (N = 0.5%) epilayer, and its size tends to decrease with increasing nitrogen concentration.

Original languageEnglish
Pages (from-to)461-466
Number of pages6
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
Publication statusPublished - 2000 Dec
Externally publishedYes

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Metallorganic vapor phase epitaxy
Epilayers
vapor phase epitaxy
Photoluminescence
optical microscopes
photoluminescence
near fields
Microscopes
Scanning
Optical transitions
scanning
optical transition
Excitons
inhomogeneity
Nitrogen
excitons
nitrogen
Temperature
GaNAs alloy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy. / Takahashi, Mitsuo; Moto, Akihiro; Tanaka, So; Tanabe, Tatsuya; Takagishi, Shigenori; Karatani, Kouichi; Nakayama, Masaaki; Matsuda, Kazunari; Saiki, Toshiharu.

In: Journal of Crystal Growth, Vol. 221, No. 1-4, 12.2000, p. 461-466.

Research output: Contribution to journalArticle

Takahashi, M, Moto, A, Tanaka, S, Tanabe, T, Takagishi, S, Karatani, K, Nakayama, M, Matsuda, K & Saiki, T 2000, 'Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy', Journal of Crystal Growth, vol. 221, no. 1-4, pp. 461-466. https://doi.org/10.1016/S0022-0248(00)00741-7
Takahashi, Mitsuo ; Moto, Akihiro ; Tanaka, So ; Tanabe, Tatsuya ; Takagishi, Shigenori ; Karatani, Kouichi ; Nakayama, Masaaki ; Matsuda, Kazunari ; Saiki, Toshiharu. / Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy. In: Journal of Crystal Growth. 2000 ; Vol. 221, No. 1-4. pp. 461-466.
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abstract = "Photoluminescence (PL) spectra and scanning near-field optical microscope (SNOM) images have been measured at low temperature to investigate the compositional fluctuations in GaNxAs1-x epilayers grown on GaAs by metalorganic vapor-phase epitaxy. Time-resolved PL has been employed to study the optical transitions and their dynamic processes. Our results suggest that the PL emission from GaNxAs1-x epilayer at low temperature is dominated by localized exciton recombination induced by compositional fluctuations. Furthermore, we directly observed the distribution of the compositional inhomogeneity in the GaNxAs1-x samples even with a small N-content of 0.5{\%} by measuring SNOM images. The emission spot size of less than 1 μm is estimated for the GaNxAs1-x (N = 0.5{\%}) epilayer, and its size tends to decrease with increasing nitrogen concentration.",
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AU - Tanabe, Tatsuya

AU - Takagishi, Shigenori

AU - Karatani, Kouichi

AU - Nakayama, Masaaki

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AU - Saiki, Toshiharu

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