TY - JOUR
T1 - Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy
AU - Takahashi, Mitsuo
AU - Moto, Akihiro
AU - Tanaka, So
AU - Tanabe, Tatsuya
AU - Takagishi, Shigenori
AU - Karatani, Kouichi
AU - Nakayama, Masaaki
AU - Matsuda, Kazunari
AU - Saiki, Toshiharu
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization as part of the New Sunshine Program under the Ministry of International Trade and Industry, Japan.
PY - 2000/12
Y1 - 2000/12
N2 - Photoluminescence (PL) spectra and scanning near-field optical microscope (SNOM) images have been measured at low temperature to investigate the compositional fluctuations in GaNxAs1-x epilayers grown on GaAs by metalorganic vapor-phase epitaxy. Time-resolved PL has been employed to study the optical transitions and their dynamic processes. Our results suggest that the PL emission from GaNxAs1-x epilayer at low temperature is dominated by localized exciton recombination induced by compositional fluctuations. Furthermore, we directly observed the distribution of the compositional inhomogeneity in the GaNxAs1-x samples even with a small N-content of 0.5% by measuring SNOM images. The emission spot size of less than 1 μm is estimated for the GaNxAs1-x (N = 0.5%) epilayer, and its size tends to decrease with increasing nitrogen concentration.
AB - Photoluminescence (PL) spectra and scanning near-field optical microscope (SNOM) images have been measured at low temperature to investigate the compositional fluctuations in GaNxAs1-x epilayers grown on GaAs by metalorganic vapor-phase epitaxy. Time-resolved PL has been employed to study the optical transitions and their dynamic processes. Our results suggest that the PL emission from GaNxAs1-x epilayer at low temperature is dominated by localized exciton recombination induced by compositional fluctuations. Furthermore, we directly observed the distribution of the compositional inhomogeneity in the GaNxAs1-x samples even with a small N-content of 0.5% by measuring SNOM images. The emission spot size of less than 1 μm is estimated for the GaNxAs1-x (N = 0.5%) epilayer, and its size tends to decrease with increasing nitrogen concentration.
UR - http://www.scopus.com/inward/record.url?scp=0034497119&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034497119&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(00)00741-7
DO - 10.1016/S0022-0248(00)00741-7
M3 - Article
AN - SCOPUS:0034497119
SN - 0022-0248
VL - 221
SP - 461
EP - 466
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -