Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy

Mitsuo Takahashi, Akihiro Moto, So Tanaka, Tatsuya Tanabe, Shigenori Takagishi, Kouichi Karatani, Masaaki Nakayama, Kazunari Matsuda, Toshiharu Saiki

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Abstract

Photoluminescence (PL) spectra and scanning near-field optical microscope (SNOM) images have been measured at low temperature to investigate the compositional fluctuations in GaNxAs1-x epilayers grown on GaAs by metalorganic vapor-phase epitaxy. Time-resolved PL has been employed to study the optical transitions and their dynamic processes. Our results suggest that the PL emission from GaNxAs1-x epilayer at low temperature is dominated by localized exciton recombination induced by compositional fluctuations. Furthermore, we directly observed the distribution of the compositional inhomogeneity in the GaNxAs1-x samples even with a small N-content of 0.5% by measuring SNOM images. The emission spot size of less than 1 μm is estimated for the GaNxAs1-x (N = 0.5%) epilayer, and its size tends to decrease with increasing nitrogen concentration.

Original languageEnglish
Pages (from-to)461-466
Number of pages6
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
Publication statusPublished - 2000 Dec

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Takahashi, M., Moto, A., Tanaka, S., Tanabe, T., Takagishi, S., Karatani, K., Nakayama, M., Matsuda, K., & Saiki, T. (2000). Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 221(1-4), 461-466. https://doi.org/10.1016/S0022-0248(00)00741-7