Observation of exciton-polariton emissions from a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy

Shigefusa F. Chichibu, Takayuki Sota, Paul J. Fons, Kakuya Iwata, Akimasa Yamada, Koji Matsubara, Shigeru Niki

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22 Citations (Scopus)

Abstract

Exciton-polariton emissions were observed at 8 K in the photoluminescence spectrum of a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy. The resonance energies of corresponding photoreflectance structures agreed with those of longitudinal and transverse excitons, i.e. upper and lower polariton branches, where A, B and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, longitudinal-transverse splitting of the B-excitonic polariton was resolved, which is due to the large oscillator strength.

Original languageEnglish
Pages (from-to)L935-L937
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number8 B
DOIs
Publication statusPublished - 2002 Aug 15
Externally publishedYes

Keywords

  • Epilayer
  • Exciton-polariton
  • Photoluminescence
  • Photoreflectance
  • ZnO
  • a-Face Sapphire

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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