Observation of full shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

K. Sekiguchi; T. Arakawa; Y. Yamauchi; K. Chida; M. Yamada; H. Takahashi; D. Chiba; K. Kobayashi; T. Ono

doi:10.1063/1.3456548

Observation of full shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

K. Sekiguchi, T. Arakawa, Y. Yamauchi, K. Chida, M. Yamada, H. Takahashi, D. Chiba, K. Kobayashi, T. Ono

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The electron transport through the CoFeB/MgO/CoFeB-based magnetic tunneling junction (MTJ) was studied by the shot noise measurement. The obtained Fano factor to characterize the shot noise is very close to unity, indicating the full shot noise, namely, the shot noise in the Schottky limit, both in the parallel and antiparallel magnetization configurations. This means the Poissonian process of the electron tunneling and the absence of the electron-electron correlation in the low bias regime. The shot noise measurements will be a good guideline to make up tunneling criteria for designing MTJ-based spin devices.

Original language	English
Article number	252504
Journal	Applied Physics Letters
Volume	96
Issue number	25
DOIs	https://doi.org/10.1063/1.3456548
Publication status	Published - 2010 Jun 21
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{06918b781d7d4b0497748963dc0bf952,

title = "Observation of full shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions",

abstract = "The electron transport through the CoFeB/MgO/CoFeB-based magnetic tunneling junction (MTJ) was studied by the shot noise measurement. The obtained Fano factor to characterize the shot noise is very close to unity, indicating the full shot noise, namely, the shot noise in the Schottky limit, both in the parallel and antiparallel magnetization configurations. This means the Poissonian process of the electron tunneling and the absence of the electron-electron correlation in the low bias regime. The shot noise measurements will be a good guideline to make up tunneling criteria for designing MTJ-based spin devices.",

author = "K. Sekiguchi and T. Arakawa and Y. Yamauchi and K. Chida and M. Yamada and H. Takahashi and D. Chiba and K. Kobayashi and T. Ono",

note = "Funding Information: This work was supported by JSPS/MEXT.",

year = "2010",

month = jun,

day = "21",

doi = "10.1063/1.3456548",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Observation of full shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

AU - Sekiguchi, K.

AU - Arakawa, T.

AU - Yamauchi, Y.

AU - Chida, K.

AU - Yamada, M.

AU - Takahashi, H.

AU - Chiba, D.

AU - Kobayashi, K.

AU - Ono, T.

N1 - Funding Information: This work was supported by JSPS/MEXT.

PY - 2010/6/21

Y1 - 2010/6/21

N2 - The electron transport through the CoFeB/MgO/CoFeB-based magnetic tunneling junction (MTJ) was studied by the shot noise measurement. The obtained Fano factor to characterize the shot noise is very close to unity, indicating the full shot noise, namely, the shot noise in the Schottky limit, both in the parallel and antiparallel magnetization configurations. This means the Poissonian process of the electron tunneling and the absence of the electron-electron correlation in the low bias regime. The shot noise measurements will be a good guideline to make up tunneling criteria for designing MTJ-based spin devices.

AB - The electron transport through the CoFeB/MgO/CoFeB-based magnetic tunneling junction (MTJ) was studied by the shot noise measurement. The obtained Fano factor to characterize the shot noise is very close to unity, indicating the full shot noise, namely, the shot noise in the Schottky limit, both in the parallel and antiparallel magnetization configurations. This means the Poissonian process of the electron tunneling and the absence of the electron-electron correlation in the low bias regime. The shot noise measurements will be a good guideline to make up tunneling criteria for designing MTJ-based spin devices.

UR - http://www.scopus.com/inward/record.url?scp=77954046290&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954046290&partnerID=8YFLogxK

U2 - 10.1063/1.3456548

DO - 10.1063/1.3456548

M3 - Article

AN - SCOPUS:77954046290

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252504

ER -

Observation of full shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

Abstract

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