Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, Kohei M Itoh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm2 V-1 s-1 is obtained at extremely high density of 4.1×1012 cm-2 in the modulation doped (MOD), 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Obtained 2DHG mobility is higher and the carrier density is about eight times larger than those ever reported for SiGe MOD heterostructures. It is also noted that obtained values are not only the highest ones among 2DHG in the strained Ge QW but also larger than those of two-dimensional electron gas in the strained Si QW.

Original languageEnglish
Pages (from-to)1935-1937
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number6
DOIs
Publication statusPublished - 2008 Apr

Fingerprint

Semiconductor quantum wells
Modulation
quantum wells
modulation
Heterojunctions
room temperature
Two dimensional electron gas
Temperature
Carrier concentration
electron gas
Gases
gases

Keywords

  • 2DHG
  • Carrier density
  • Ge quantum well
  • MBE
  • Mobility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature. / Myronov, M.; Sawano, K.; Shiraki, Y.; Mouri, T.; Itoh, Kohei M.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, No. 6, 04.2008, p. 1935-1937.

Research output: Contribution to journalArticle

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