Observation of interdiffusion in ZnO/CuInSe2 heterostructures and its effect on film properties

Ralf Hunger, Paul Fons, Kakuya Iwata, Akimasa Yamada, Koji Matsubara, Shigeru Niki, Ken Nakahara, Hidemi Takasu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


ZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.

Original languageEnglish
Pages (from-to)H8211-H8216
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2001
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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