Observation of pronounced effect of compressive strain on room-temperature transport properties of two-dimensional hole gas in a strained Ge quantum well

Maksym Myronov, Kentarou Sawano, Kohei M. Itoh, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

Abstract

Strong effect of compressive strain on room-temperature transport properties of two-dimensional hole gas (2DHG) confined in a strained Ge quantum well (QW) of SiGe heterostructures was observed. By increasing compressive strain in the Ge QW the pronounced increase of 2DHG gas density and conductivity were obtained in the full range of researched strain variation. At the same time the increase of 2DHG drift mobility was observed until a certain high strain in the Ge QW, but showed slight reduction under higher strain. Nevertheless the monotonous enhancement of 2DHG conductivity was observed.

Original languageEnglish
Pages (from-to)514021-514023
Number of pages3
JournalApplied Physics Express
Volume1
Issue number5
DOIs
Publication statusPublished - 2008 May

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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