Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, Kohei M Itoh, M. Uematsu, H. Kageshima, K. Shiraishi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.

Original languageEnglish
Pages (from-to)390-393
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume249
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Aug

Fingerprint

thermal emission
Oxidation
oxidation
high resolution
Isotopes
isotopes
Rutherford backscattering spectroscopy
Heterojunctions
backscattering
Hot Temperature
Atoms
profiles
spectroscopy
atoms

Keywords

  • Diffusion
  • HRBS
  • Si emission
  • Si isotope
  • SiO
  • Thermal oxidation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS. / Hosoi, S.; Nakajima, K.; Suzuki, M.; Kimura, K.; Shimizu, Y.; Fukatsu, S.; Itoh, Kohei M; Uematsu, M.; Kageshima, H.; Shiraishi, K.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, No. 1-2 SPEC. ISS., 08.2006, p. 390-393.

Research output: Contribution to journalArticle

Hosoi, S. ; Nakajima, K. ; Suzuki, M. ; Kimura, K. ; Shimizu, Y. ; Fukatsu, S. ; Itoh, Kohei M ; Uematsu, M. ; Kageshima, H. ; Shiraishi, K. / Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2006 ; Vol. 249, No. 1-2 SPEC. ISS. pp. 390-393.
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T1 - Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

AU - Hosoi, S.

AU - Nakajima, K.

AU - Suzuki, M.

AU - Kimura, K.

AU - Shimizu, Y.

AU - Fukatsu, S.

AU - Itoh, Kohei M

AU - Uematsu, M.

AU - Kageshima, H.

AU - Shiraishi, K.

PY - 2006/8

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N2 - An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.

AB - An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.

KW - Diffusion

KW - HRBS

KW - Si emission

KW - Si isotope

KW - SiO

KW - Thermal oxidation

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