Si self-diffusion in the presence of end-of-range (EOR) defects is investigated using natSi/28Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800-950°C. The behavior of Si self-interstitials is investigated through the 30Si self-diffusion. The experimental 30Si profiles show further enhancement of Si self-diffusion at the EOR defect region, in addition to the transient enhanced diffusion via excess Si self-interstitials by EOR defects. To explain this additional enhanced diffusion, we propose a model which takes into account enhanced diffusion by tensile strain originated from EOR defects. The calculation results based on this model have well reproduced the experimental 30Si profiles.
ASJC Scopus subject areas
- Physics and Astronomy(all)