Si self-diffusion in the presence of end-of-range (EOR) defects is investigated using <sup>nat</sup>Si/<sup>28</sup>Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800-950°C. The behavior of Si self-interstitials is investigated through the <sup>30</sup>Si self-diffusion. The experimental <sup>30</sup>Si profiles show further enhancement of Si self-diffusion at the EOR defect region, in addition to the transient enhanced diffusion via excess Si self-interstitials by EOR defects. To explain this additional enhanced diffusion, we propose a model which takes into account enhanced diffusion by tensile strain originated from EOR defects. The calculation results based on this model have well reproduced the experimental <sup>30</sup>Si profiles.
ASJC Scopus subject areas
- Physics and Astronomy(all)