Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Taiga Isoda, Masashi Uematsu, Kohei M Itoh

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Abstract

Si self-diffusion in the presence of end-of-range (EOR) defects is investigated using <sup>nat</sup>Si/<sup>28</sup>Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800-950°C. The behavior of Si self-interstitials is investigated through the <sup>30</sup>Si self-diffusion. The experimental <sup>30</sup>Si profiles show further enhancement of Si self-diffusion at the EOR defect region, in addition to the transient enhanced diffusion via excess Si self-interstitials by EOR defects. To explain this additional enhanced diffusion, we propose a model which takes into account enhanced diffusion by tensile strain originated from EOR defects. The calculation results based on this model have well reproduced the experimental <sup>30</sup>Si profiles.

Original languageEnglish
Article number115706
JournalJournal of Applied Physics
Volume118
Issue number11
DOIs
Publication statusPublished - 2015 Sep 21

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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