Si self-diffusion in the presence of end-of-range (EOR) defects is investigated using natSi/28Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800-950°C. The behavior of Si self-interstitials is investigated through the 30Si self-diffusion. The experimental 30Si profiles show further enhancement of Si self-diffusion at the EOR defect region, in addition to the transient enhanced diffusion via excess Si self-interstitials by EOR defects. To explain this additional enhanced diffusion, we propose a model which takes into account enhanced diffusion by tensile strain originated from EOR defects. The calculation results based on this model have well reproduced the experimental 30Si profiles.
|Journal||Journal of Applied Physics|
|Publication status||Published - 2015 Sept 21|
ASJC Scopus subject areas
- Physics and Astronomy(all)