Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

Y. Sugiyama; Y. Nakata; S. Muto; N. Horiguchi; T. Futatsugi; Y. Awano; N. Yokoyama

doi:10.1049/el:19971096

Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

Y. Sugiyama, Y. Nakata, S. Muto, N. Horiguchi, T. Futatsugi, Y. Awano, N. Yokoyama

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

Original language	English
Pages (from-to)	1655-1657
Number of pages	3
Journal	Electronics Letters
Volume	33
Issue number	19
DOIs	https://doi.org/10.1049/el:19971096
Publication status	Published - 1997 Sep 11
Externally published	Yes

Keywords

Photoconductivity
Semiconductor quantum dots

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19971096

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@article{e16089b91b234c448f57727a972b123e,

title = "Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode",

abstract = "The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.",

keywords = "Photoconductivity, Semiconductor quantum dots",

author = "Y. Sugiyama and Y. Nakata and S. Muto and N. Horiguchi and T. Futatsugi and Y. Awano and N. Yokoyama",

year = "1997",

month = sep,

day = "11",

doi = "10.1049/el:19971096",

language = "English",

volume = "33",

pages = "1655--1657",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "19",

}

TY - JOUR

T1 - Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

AU - Sugiyama, Y.

AU - Nakata, Y.

AU - Muto, S.

AU - Horiguchi, N.

AU - Futatsugi, T.

AU - Awano, Y.

AU - Yokoyama, N.

PY - 1997/9/11

Y1 - 1997/9/11

N2 - The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

AB - The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

KW - Photoconductivity

KW - Semiconductor quantum dots

UR - http://www.scopus.com/inward/record.url?scp=0031237359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031237359&partnerID=8YFLogxK

U2 - 10.1049/el:19971096

DO - 10.1049/el:19971096

M3 - Article

AN - SCOPUS:0031237359

VL - 33

SP - 1655

EP - 1657

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 19

ER -