Abstract
The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.
| Original language | English |
|---|---|
| Pages (from-to) | 1655-1657 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 33 |
| Issue number | 19 |
| Publication status | Published - 1997 Sep 11 |
| Externally published | Yes |
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Keywords
- Photoconductivity
- Semiconductor quantum dots
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Sugiyama, Y., Nakata, Y., Muto, S., Horiguchi, N., Futatsugi, T., Awano, Y., & Yokoyama, N. (1997). Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode. Electronics Letters, 33(19), 1655-1657.