Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

Y. Sugiyama, Y. Nakata, S. Muto, N. Horiguchi, T. Futatsugi, Yuji Awano, N. Yokoyama

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

Original languageEnglish
Pages (from-to)1655-1657
Number of pages3
JournalElectronics Letters
Volume33
Issue number19
Publication statusPublished - 1997 Sep 11
Externally publishedYes

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Keywords

  • Photoconductivity
  • Semiconductor quantum dots

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sugiyama, Y., Nakata, Y., Muto, S., Horiguchi, N., Futatsugi, T., Awano, Y., & Yokoyama, N. (1997). Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode. Electronics Letters, 33(19), 1655-1657.