Abstract
The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.
Original language | English |
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Pages (from-to) | 1655-1657 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 33 |
Issue number | 19 |
DOIs | |
Publication status | Published - 1997 Sep 11 |
Externally published | Yes |
Keywords
- Photoconductivity
- Semiconductor quantum dots
ASJC Scopus subject areas
- Electrical and Electronic Engineering