The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.
|Number of pages||3|
|Publication status||Published - 1997 Sep 11|
- Semiconductor quantum dots
ASJC Scopus subject areas
- Electrical and Electronic Engineering