Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

Y. Sugiyama, Y. Nakata, S. Muto, N. Horiguchi, T. Futatsugi, Y. Awano, N. Yokoyama

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

Original languageEnglish
Pages (from-to)1655-1657
Number of pages3
JournalElectronics Letters
Volume33
Issue number19
DOIs
Publication statusPublished - 1997 Sep 11
Externally publishedYes

Keywords

  • Photoconductivity
  • Semiconductor quantum dots

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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