Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots buried in pn-junction

Y. Sugiyama, Y. Nakata, S. Muto, N. Horiguchi, T. Futatsugi, Y. Awano, N. Yokoyama

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Spectral hole burning of InAs self-assembled quantum dots (QDs) buried in pn-junction was observed for the first time. At 5 K, a narrow hole with width of less than 1 nm was observed and the hole depth increased as electric field increased. The hole was observed up to 40 K. The spectral hole is considered to be formed when tunneling rate of electrons becomes faster than recombination rate of electrons in a QD. Spectral hole width was well fitted with the convolution of Gaussian distribution of read light and Lorentzian distribution of absolute change taking into account homogeneous broadening of InAs QDs of ≤ 0.08 meV. Power-broadening of spectral hole was also observed with a writing light power of 20 mW.

Original languageEnglish
Pages (from-to)632-636
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume2
Issue number1-4
DOIs
Publication statusPublished - 1998 Jul 15
Externally publishedYes

Keywords

  • Hole burning
  • Homogeneous broadening
  • InAs
  • Quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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