Observation of the inverse spin Hall effect in silicon

Kazuya Ando, Eiji Saitoh

Research output: Contribution to journalArticle

136 Citations (Scopus)

Abstract

The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, where accessing the spin Hall effects has been believed to be difficult because of its very weak spin-orbit interaction. Here we report observation of the inverse spin Hall effect in silicon at room temperature. The spin/charge current conversion efficiency, the spin Hall angle, is obtained as 0.0001 for a p-type silicon film. In spite of the small spin Hall angle, we found a clear electric voltage due to the inverse spin Hall effect in the p-Si film, demonstrating that silicon can be used as a spin-current detector.

Original languageEnglish
Article number629
JournalNature Communications
Volume3
DOIs
Publication statusPublished - 2012
Externally publishedYes

Fingerprint

Spin Hall effect
Silicon
Hall effect
Observation
Semiconductors
silicon
Orbit
Orbits
Semiconductor materials
Metals
Conversion efficiency
Electrons
spin-orbit interactions
Momentum
Temperature
Detectors
Electric potential
silicon films

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)
  • Chemistry(all)
  • Physics and Astronomy(all)

Cite this

Observation of the inverse spin Hall effect in silicon. / Ando, Kazuya; Saitoh, Eiji.

In: Nature Communications, Vol. 3, 629, 2012.

Research output: Contribution to journalArticle

@article{0e657fc007114a699cef79feecc36277,
title = "Observation of the inverse spin Hall effect in silicon",
abstract = "The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, where accessing the spin Hall effects has been believed to be difficult because of its very weak spin-orbit interaction. Here we report observation of the inverse spin Hall effect in silicon at room temperature. The spin/charge current conversion efficiency, the spin Hall angle, is obtained as 0.0001 for a p-type silicon film. In spite of the small spin Hall angle, we found a clear electric voltage due to the inverse spin Hall effect in the p-Si film, demonstrating that silicon can be used as a spin-current detector.",
author = "Kazuya Ando and Eiji Saitoh",
year = "2012",
doi = "10.1038/ncomms1640",
language = "English",
volume = "3",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Observation of the inverse spin Hall effect in silicon

AU - Ando, Kazuya

AU - Saitoh, Eiji

PY - 2012

Y1 - 2012

N2 - The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, where accessing the spin Hall effects has been believed to be difficult because of its very weak spin-orbit interaction. Here we report observation of the inverse spin Hall effect in silicon at room temperature. The spin/charge current conversion efficiency, the spin Hall angle, is obtained as 0.0001 for a p-type silicon film. In spite of the small spin Hall angle, we found a clear electric voltage due to the inverse spin Hall effect in the p-Si film, demonstrating that silicon can be used as a spin-current detector.

AB - The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, where accessing the spin Hall effects has been believed to be difficult because of its very weak spin-orbit interaction. Here we report observation of the inverse spin Hall effect in silicon at room temperature. The spin/charge current conversion efficiency, the spin Hall angle, is obtained as 0.0001 for a p-type silicon film. In spite of the small spin Hall angle, we found a clear electric voltage due to the inverse spin Hall effect in the p-Si film, demonstrating that silicon can be used as a spin-current detector.

UR - http://www.scopus.com/inward/record.url?scp=84856727931&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856727931&partnerID=8YFLogxK

U2 - 10.1038/ncomms1640

DO - 10.1038/ncomms1640

M3 - Article

VL - 3

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 629

ER -