Observation of the random-to-correlated transition of the ionized-impurity distribution in compensated semiconductors

Jiro Kato, Kohei M. Itoh, Eugene E. Haller

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We discuss the broadening of ground state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible a unique determination of the ionized-impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized-impurity distribution as a function of the ionized-impurity concentration and of temperature.

Original languageEnglish
Article number241201
Pages (from-to)2412011-2412014
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number24
Publication statusPublished - 2002 Jun 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Observation of the random-to-correlated transition of the ionized-impurity distribution in compensated semiconductors'. Together they form a unique fingerprint.

  • Cite this