Observation of the random-to-correlated transition of the ionized-impurity distribution in compensated semiconductors

Jiro Kato, Kohei M Itoh, Eugene E. Haller

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We discuss the broadening of ground state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible a unique determination of the ionized-impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized-impurity distribution as a function of the ionized-impurity concentration and of temperature.

Original languageEnglish
Article number241201
Pages (from-to)2412011-2412014
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number24
Publication statusPublished - 2002 Jun 15

Fingerprint

Impurities
Semiconductor materials
impurities
Electron transitions
Excited states
Linewidth
Ground state
Electric fields
gradients
ground state
electric fields
excitation
simulation
Temperature
temperature
Monte Carlo simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Observation of the random-to-correlated transition of the ionized-impurity distribution in compensated semiconductors. / Kato, Jiro; Itoh, Kohei M; Haller, Eugene E.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 24, 241201, 15.06.2002, p. 2412011-2412014.

Research output: Contribution to journalArticle

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