Abstract
We discuss the broadening of ground state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible a unique determination of the ionized-impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized-impurity distribution as a function of the ionized-impurity concentration and of temperature.
| Original language | English |
|---|---|
| Article number | 241201 |
| Pages (from-to) | 2412011-2412014 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 24 |
| Publication status | Published - 2002 Jun 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics