Abstract
We discuss the broadening of ground state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible a unique determination of the ionized-impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized-impurity distribution as a function of the ionized-impurity concentration and of temperature.
| Original language | English |
|---|---|
| Article number | 241201 |
| Pages (from-to) | 2412011-2412014 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 24 |
| Publication status | Published - 2002 Jun 15 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Observation of the random-to-correlated transition of the ionized-impurity distribution in compensated semiconductors. / Kato, Jiro; Itoh, Kohei M; Haller, Eugene E.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 24, 241201, 15.06.2002, p. 2412011-2412014.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Observation of the random-to-correlated transition of the ionized-impurity distribution in compensated semiconductors
AU - Kato, Jiro
AU - Itoh, Kohei M
AU - Haller, Eugene E.
PY - 2002/6/15
Y1 - 2002/6/15
N2 - We discuss the broadening of ground state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible a unique determination of the ionized-impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized-impurity distribution as a function of the ionized-impurity concentration and of temperature.
AB - We discuss the broadening of ground state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible a unique determination of the ionized-impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized-impurity distribution as a function of the ionized-impurity concentration and of temperature.
UR - http://www.scopus.com/inward/record.url?scp=0037098423&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037098423&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0037098423
VL - 65
SP - 2412011
EP - 2412014
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 24
M1 - 241201
ER -