We discuss the broadening of ground state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible a unique determination of the ionized-impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized-impurity distribution as a function of the ionized-impurity concentration and of temperature.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2002 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics