Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures

M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, Kohei M Itoh

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Abstract

Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm2 V s is obtained at extremely high density of 41× 1011 cm-2 in the modulation doped, 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Very high 2DHG density is achieved by increasing the boron modulation doping, reducing the spacer layer thickness located between it and Ge QW, and increasing the valence-band offset of Ge QW, which also results in the enhancement of mobility. The obtained 2DHG mobility and carrier density exceed those reported for two-dimensional electron gas in the strained Si QW of SiGe heterostructures.

Original languageEnglish
Article number082108
JournalApplied Physics Letters
Volume91
Issue number8
DOIs
Publication statusPublished - 2007

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electron gas
quantum wells
room temperature
gases
modulation doping
spacers
boron
valence
modulation
augmentation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm2 V s is obtained at extremely high density of 41× 1011 cm-2 in the modulation doped, 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Very high 2DHG density is achieved by increasing the boron modulation doping, reducing the spacer layer thickness located between it and Ge QW, and increasing the valence-band offset of Ge QW, which also results in the enhancement of mobility. The obtained 2DHG mobility and carrier density exceed those reported for two-dimensional electron gas in the strained Si QW of SiGe heterostructures.",
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T1 - Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures

AU - Myronov, M.

AU - Sawano, K.

AU - Shiraki, Y.

AU - Mouri, T.

AU - Itoh, Kohei M

PY - 2007

Y1 - 2007

N2 - Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm2 V s is obtained at extremely high density of 41× 1011 cm-2 in the modulation doped, 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Very high 2DHG density is achieved by increasing the boron modulation doping, reducing the spacer layer thickness located between it and Ge QW, and increasing the valence-band offset of Ge QW, which also results in the enhancement of mobility. The obtained 2DHG mobility and carrier density exceed those reported for two-dimensional electron gas in the strained Si QW of SiGe heterostructures.

AB - Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm2 V s is obtained at extremely high density of 41× 1011 cm-2 in the modulation doped, 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Very high 2DHG density is achieved by increasing the boron modulation doping, reducing the spacer layer thickness located between it and Ge QW, and increasing the valence-band offset of Ge QW, which also results in the enhancement of mobility. The obtained 2DHG mobility and carrier density exceed those reported for two-dimensional electron gas in the strained Si QW of SiGe heterostructures.

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