On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection

Y. M. Weng, E. Ohta, M. Sakata

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220°C for the A center and to 140°C for the divacancy and E center. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).

Original languageEnglish
Pages (from-to)515-518
Number of pages4
JournalJournal of Applied Physics
Volume65
Issue number2
DOIs
Publication statusPublished - 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection'. Together they form a unique fingerprint.

  • Cite this