TY - JOUR
T1 - On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical applications
AU - Yan, J.
AU - Yoshino, M.
AU - Kuriagawa, T.
AU - Shirakashi, T.
AU - Syoji, K.
AU - Komanduri, R.
N1 - Funding Information:
This work was supported, on the US side, by a grant from the NSF's US-Japan Co-operative Program on High efficiency, damage-free finishing of advanced ceramics and glasses (INT-9603002). One of the authors (R.K.) thanks the National Science Foundation for support of this work. In particular, sincere thanks are extended to Drs B.M. Kramer, L. Martin-Vega, K. Rajurkar, and D. Durham of the Division of Design, Manufacture, and Industrial Innovation (DMII), Dr A. DeAngelis of the International Program, and Dr J. Larsen Basse of the Surface Engineering and Tribology Program at NSF. In addition, the author thanks Dr W. Coblenz of DARPA for his support and encouragement. The author also acknowledges the support from the DOD EPSCoR Program on Finishing of Advanced Ceramics. On the Japanese side, support is acknowledged (K.S and T.K.) from Japan New Energy and Industrial Technology Development Organization (NEDO, RC-11H2003) and the JSPE UltraPrecision Machining Committee (UPM-97-00), as well as the Ministry of Education of Japan (T.S. and M.Y.).
PY - 2001/1/15
Y1 - 2001/1/15
N2 - The role of hydrostatic pressure in the ductile machining of silicon is demonstrated experimentally using a single crystal diamond tool with a large negative rake (-40°) and a high side cutting edge angle (SCEA) (approximately 88°) and undeformed chip thickness in the nanometric range (approximately 50 nm) using an ultraprecision machine tool and a special machining stage inside a high external hydrostatic pressure (approximately 400 MPa) apparatus.
AB - The role of hydrostatic pressure in the ductile machining of silicon is demonstrated experimentally using a single crystal diamond tool with a large negative rake (-40°) and a high side cutting edge angle (SCEA) (approximately 88°) and undeformed chip thickness in the nanometric range (approximately 50 nm) using an ultraprecision machine tool and a special machining stage inside a high external hydrostatic pressure (approximately 400 MPa) apparatus.
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U2 - 10.1016/S0921-5093(00)01031-5
DO - 10.1016/S0921-5093(00)01031-5
M3 - Article
AN - SCOPUS:0035157059
VL - 297
SP - 230
EP - 234
JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
SN - 0921-5093
IS - 1-2
ER -