Abstract
The role of hydrostatic pressure in the ductile machining of silicon is demonstrated experimentally using a single crystal diamond tool with a large negative rake (-40°) and a high side cutting edge angle (SCEA) (approximately 88°) and undeformed chip thickness in the nanometric range (approximately 50 nm) using an ultraprecision machine tool and a special machining stage inside a high external hydrostatic pressure (approximately 400 MPa) apparatus.
| Original language | English |
|---|---|
| Pages (from-to) | 230-234 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering A |
| Volume | 297 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2001 Jan 15 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical applications. / Yan, Jiwang; Yoshino, M.; Kuriagawa, T.; Shirakashi, T.; Syoji, K.; Komanduri, R.
In: Materials Science and Engineering A, Vol. 297, No. 1-2, 15.01.2001, p. 230-234.Research output: Contribution to journal › Article
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TY - JOUR
T1 - On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical applications
AU - Yan, Jiwang
AU - Yoshino, M.
AU - Kuriagawa, T.
AU - Shirakashi, T.
AU - Syoji, K.
AU - Komanduri, R.
PY - 2001/1/15
Y1 - 2001/1/15
N2 - The role of hydrostatic pressure in the ductile machining of silicon is demonstrated experimentally using a single crystal diamond tool with a large negative rake (-40°) and a high side cutting edge angle (SCEA) (approximately 88°) and undeformed chip thickness in the nanometric range (approximately 50 nm) using an ultraprecision machine tool and a special machining stage inside a high external hydrostatic pressure (approximately 400 MPa) apparatus.
AB - The role of hydrostatic pressure in the ductile machining of silicon is demonstrated experimentally using a single crystal diamond tool with a large negative rake (-40°) and a high side cutting edge angle (SCEA) (approximately 88°) and undeformed chip thickness in the nanometric range (approximately 50 nm) using an ultraprecision machine tool and a special machining stage inside a high external hydrostatic pressure (approximately 400 MPa) apparatus.
UR - http://www.scopus.com/inward/record.url?scp=0035157059&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035157059&partnerID=8YFLogxK
U2 - 10.1016/S0921-5093(00)01031-5
DO - 10.1016/S0921-5093(00)01031-5
M3 - Article
AN - SCOPUS:0035157059
VL - 297
SP - 230
EP - 234
JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
SN - 0921-5093
IS - 1-2
ER -