On the origin of tunneling barriers in silicon single electron and single hole transistors

Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

To clarify the channel potential profiles, Coulomb blockades of single electron and single hole tunneling in Si nanosize narrow channel metal-oxide-semiconductor field-effect transistors are intensively studied. Devices with both n+ and p+ source/drain contacts were fabricated on silicon-on-insulator substrates. Transport properties of a hole system as well as an electron system induced in the same channel were investigated. It is found from the experimental results that potential fluctuations in the channel act as tunnel barriers for both electrons and holes. Lateral quantum confinement effects or silicon oxide (SiOx) are thought to be the cause of tunnel barriers.

Original languageEnglish
Pages (from-to)1126-1128
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number8
DOIs
Publication statusPublished - 1999
Externally publishedYes

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transistors
silicon
tunnels
silicon oxides
metal oxide semiconductors
electrons
field effect transistors
transport properties
insulators
oxides
causes
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

On the origin of tunneling barriers in silicon single electron and single hole transistors. / Ishikuro, Hiroki; Hiramoto, Toshiro.

In: Applied Physics Letters, Vol. 74, No. 8, 1999, p. 1126-1128.

Research output: Contribution to journalArticle

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