On the phase transformation of single-crystal 4H-SiC during nanoindentation

Mitsuhiro Matsumoto, Hu Huang, Hirofumi Harada, Koichi Kakimoto, Jiwang Yan

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Microstructural changes of single-crystal 4H silicon carbide (SiC) induced by nanoindentation under various conditions were investigated. It was found that nanoindentation at different crystal orientations induced different Raman spectroscopic characteristics. Cross-sectional observation by transmission electron microscopy indicated that a very deep subsurface damage region was formed where dislocations occurring along the basal planes, crystal grains rotation and micro-cracks were observed. The microstructures of the damage regions were strongly affected by the nanoindentation conditions. Coupled analysis of lattice fringes and Raman spectra indicated that a phase transformation from 4H-SiC to 3C-SiC occurred during nanoindentation, which has never been reported before. Furthermore, the 4H to 3C phase transformation strongly depended on the indenter orientation with respect to the SiC crystal. These findings are meaningful for low-damage precision machining of SiC substrates.

Original languageEnglish
Article number265303
JournalJournal of Physics D: Applied Physics
Volume50
Issue number26
DOIs
Publication statusPublished - 2017 Jun 12

Fingerprint

Nanoindentation
nanoindentation
Silicon carbide
silicon carbides
phase transformations
Phase transitions
Single crystals
single crystals
damage
Crystal orientation
crystals
Crystals
Dislocations (crystals)
machining
Raman scattering
Machining
cracks
silicon carbide
Raman spectra
Transmission electron microscopy

Keywords

  • crystal orientation
  • dislocation
  • nanoindentation
  • phase transformation
  • single-crystal silicon carbide
  • subsurface damage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

On the phase transformation of single-crystal 4H-SiC during nanoindentation. / Matsumoto, Mitsuhiro; Huang, Hu; Harada, Hirofumi; Kakimoto, Koichi; Yan, Jiwang.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 26, 265303, 12.06.2017.

Research output: Contribution to journalArticle

Matsumoto, Mitsuhiro ; Huang, Hu ; Harada, Hirofumi ; Kakimoto, Koichi ; Yan, Jiwang. / On the phase transformation of single-crystal 4H-SiC during nanoindentation. In: Journal of Physics D: Applied Physics. 2017 ; Vol. 50, No. 26.
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