TY - JOUR
T1 - On the phase transformation of single-crystal 4H-SiC during nanoindentation
AU - Matsumoto, Mitsuhiro
AU - Huang, Hu
AU - Harada, Hirofumi
AU - Kakimoto, Koichi
AU - Yan, Jiwang
N1 - Funding Information:
This study has been financially supported by Japan Society for the Promotion of Science, Grant-in-Aid for Exploratory Research 15K13838.
Publisher Copyright:
© 2017 IOP Publishing Ltd.
PY - 2017/6/12
Y1 - 2017/6/12
N2 - Microstructural changes of single-crystal 4H silicon carbide (SiC) induced by nanoindentation under various conditions were investigated. It was found that nanoindentation at different crystal orientations induced different Raman spectroscopic characteristics. Cross-sectional observation by transmission electron microscopy indicated that a very deep subsurface damage region was formed where dislocations occurring along the basal planes, crystal grains rotation and micro-cracks were observed. The microstructures of the damage regions were strongly affected by the nanoindentation conditions. Coupled analysis of lattice fringes and Raman spectra indicated that a phase transformation from 4H-SiC to 3C-SiC occurred during nanoindentation, which has never been reported before. Furthermore, the 4H to 3C phase transformation strongly depended on the indenter orientation with respect to the SiC crystal. These findings are meaningful for low-damage precision machining of SiC substrates.
AB - Microstructural changes of single-crystal 4H silicon carbide (SiC) induced by nanoindentation under various conditions were investigated. It was found that nanoindentation at different crystal orientations induced different Raman spectroscopic characteristics. Cross-sectional observation by transmission electron microscopy indicated that a very deep subsurface damage region was formed where dislocations occurring along the basal planes, crystal grains rotation and micro-cracks were observed. The microstructures of the damage regions were strongly affected by the nanoindentation conditions. Coupled analysis of lattice fringes and Raman spectra indicated that a phase transformation from 4H-SiC to 3C-SiC occurred during nanoindentation, which has never been reported before. Furthermore, the 4H to 3C phase transformation strongly depended on the indenter orientation with respect to the SiC crystal. These findings are meaningful for low-damage precision machining of SiC substrates.
KW - crystal orientation
KW - dislocation
KW - nanoindentation
KW - phase transformation
KW - single-crystal silicon carbide
KW - subsurface damage
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U2 - 10.1088/1361-6463/aa7489
DO - 10.1088/1361-6463/aa7489
M3 - Article
AN - SCOPUS:85021125151
SN - 0022-3727
VL - 50
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 26
M1 - 265303
ER -