One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)

Takeharu Sekiguchi, Shunji Yoshida, Kohei M Itoh, Josef Mysliveček, Bert Voigtländer

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Abstract

Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 °C, Ge nanoclusters of diameters less than 2.0 nm form a one-dimensional array of the periodicity 2.7 nm along each step. This self-organization is due to preferential nucleation of Ge on the unfaulted 7×7 half-unit cells at the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters.

Original languageEnglish
Article number013108
JournalApplied Physics Letters
Volume90
Issue number1
DOIs
Publication statusPublished - 2007
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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