One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)

Takeharu Sekiguchi, Shunji Yoshida, Kohei M Itoh, Josef Mysliveček, Bert Voigtländer

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 °C, Ge nanoclusters of diameters less than 2.0 nm form a one-dimensional array of the periodicity 2.7 nm along each step. This self-organization is due to preferential nucleation of Ge on the unfaulted 7×7 half-unit cells at the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters.

Original languageEnglish
Article number013108
JournalApplied Physics Letters
Volume90
Issue number1
DOIs
Publication statusPublished - 2007
Externally publishedYes

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nanoclusters
spectroscopy
scanning tunneling microscopy
periodic variations
molecular beam epitaxy
nucleation
scanning
cells
electronics
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111). / Sekiguchi, Takeharu; Yoshida, Shunji; Itoh, Kohei M; Mysliveček, Josef; Voigtländer, Bert.

In: Applied Physics Letters, Vol. 90, No. 1, 013108, 2007.

Research output: Contribution to journalArticle

Sekiguchi, Takeharu ; Yoshida, Shunji ; Itoh, Kohei M ; Mysliveček, Josef ; Voigtländer, Bert. / One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111). In: Applied Physics Letters. 2007 ; Vol. 90, No. 1.
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