One-side-electrode-type fluid-based inclinometer combined with CMOS circuitry

Asrulnizam Bin Abd Manaf; Kazumasa Nakamura; Junpei Onishi; Yoshinori Matsumoto

doi:10.1109/ICSENS.2007.4388533

One-side-electrode-type fluid-based inclinometer combined with CMOS circuitry

Asrulnizam Bin Abd Manaf, Kazumasa Nakamura, Junpei Onishi, Yoshinori Matsumoto

Department of Applied Physics and Physico-Informatics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In this study, electrical double layer theory is applied to realize one-side-electrode-type fluid-based inclinometer combined with CMOS circuitry. Charge-balanced capacitance-voltage conversion (C-V converter) circuit was designed as detection circuit and it was fabricated using 0.35 μm CMOS process. The sensor design and substrate penetration lithography method are demonstrated in sensor fabrication, and experiment to find a proper fluid for this application was implemented.

Original language	English
Title of host publication	The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Pages	844-847
Number of pages	4
DOIs	https://doi.org/10.1109/ICSENS.2007.4388533
Publication status	Published - 2007 Dec 1
Event	6th IEEE Conference on SENSORS, IEEE SENSORS 2007 - Atlanta, GA, United States Duration: 2007 Oct 28 → 2007 Oct 31

Publication series

Name	Proceedings of IEEE Sensors

Other

Other	6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Country/Territory	United States
City	Atlanta, GA
Period	07/10/28 → 07/10/31

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICSENS.2007.4388533

Cite this

Manaf, ABA, Nakamura, K, Onishi, J & Matsumoto, Y 2007, One-side-electrode-type fluid-based inclinometer combined with CMOS circuitry. in The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007., 4388533, Proceedings of IEEE Sensors, pp. 844-847, 6th IEEE Conference on SENSORS, IEEE SENSORS 2007, Atlanta, GA, United States, 07/10/28. https://doi.org/10.1109/ICSENS.2007.4388533

@inproceedings{e29e133f630b4581a0e057f5e6db3755,

title = "One-side-electrode-type fluid-based inclinometer combined with CMOS circuitry",

abstract = "In this study, electrical double layer theory is applied to realize one-side-electrode-type fluid-based inclinometer combined with CMOS circuitry. Charge-balanced capacitance-voltage conversion (C-V converter) circuit was designed as detection circuit and it was fabricated using 0.35 μm CMOS process. The sensor design and substrate penetration lithography method are demonstrated in sensor fabrication, and experiment to find a proper fluid for this application was implemented.",

author = "Manaf, {Asrulnizam Bin Abd} and Kazumasa Nakamura and Junpei Onishi and Yoshinori Matsumoto",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ICSENS.2007.4388533",

language = "English",

isbn = "1424412617",

series = "Proceedings of IEEE Sensors",

pages = "844--847",

booktitle = "The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007",

note = "6th IEEE Conference on SENSORS, IEEE SENSORS 2007 ; Conference date: 28-10-2007 Through 31-10-2007",

}

TY - GEN

T1 - One-side-electrode-type fluid-based inclinometer combined with CMOS circuitry

AU - Manaf, Asrulnizam Bin Abd

AU - Nakamura, Kazumasa

AU - Onishi, Junpei

AU - Matsumoto, Yoshinori

PY - 2007/12/1

Y1 - 2007/12/1

N2 - In this study, electrical double layer theory is applied to realize one-side-electrode-type fluid-based inclinometer combined with CMOS circuitry. Charge-balanced capacitance-voltage conversion (C-V converter) circuit was designed as detection circuit and it was fabricated using 0.35 μm CMOS process. The sensor design and substrate penetration lithography method are demonstrated in sensor fabrication, and experiment to find a proper fluid for this application was implemented.

AB - In this study, electrical double layer theory is applied to realize one-side-electrode-type fluid-based inclinometer combined with CMOS circuitry. Charge-balanced capacitance-voltage conversion (C-V converter) circuit was designed as detection circuit and it was fabricated using 0.35 μm CMOS process. The sensor design and substrate penetration lithography method are demonstrated in sensor fabrication, and experiment to find a proper fluid for this application was implemented.

UR - http://www.scopus.com/inward/record.url?scp=48349145376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48349145376&partnerID=8YFLogxK

U2 - 10.1109/ICSENS.2007.4388533

DO - 10.1109/ICSENS.2007.4388533

M3 - Conference contribution

AN - SCOPUS:48349145376

SN - 1424412617

SN - 9781424412617

T3 - Proceedings of IEEE Sensors

SP - 844

EP - 847

BT - The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007

T2 - 6th IEEE Conference on SENSORS, IEEE SENSORS 2007

Y2 - 28 October 2007 through 31 October 2007

ER -

One-side-electrode-type fluid-based inclinometer combined with CMOS circuitry

Abstract

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