Optical and electrical characterization of free-standing 3C-SiC films grown on undulant 6in Si substrates

Toshimichi Yamada, Kohei M Itoh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Hall measurements and photoluminescence of nitrogen doped free standing SC-SiC films grown directly on undulant 6-inch Si substrates by a CVD method are reported. A clear difference in the electron mobility was observed before and after removal of the highly defected region near the Si/3C-SiC interface. Low-temperature photoluminescence spectra showed sharp features of the nitrogen bound exciton. Luminescence due to free exciton recombination, which is a good measure of the crystalline quality of samples, has been observed in as-grown 3C-SiC films formed directly on Si.

Original languageEnglish
Pages (from-to)675-678
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
Publication statusPublished - 2002

Fingerprint

Excitons
Photoluminescence
Nitrogen
excitons
photoluminescence
nitrogen
Electron mobility
Substrates
electron mobility
Luminescence
Chemical vapor deposition
vapor deposition
luminescence
Crystalline materials
Temperature
LDS 751

Keywords

  • Free excitons
  • Hall-effect measurements
  • Photoluminescence
  • Undulant substrates

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Optical and electrical characterization of free-standing 3C-SiC films grown on undulant 6in Si substrates. / Yamada, Toshimichi; Itoh, Kohei M.

In: Materials Science Forum, Vol. 389-393, No. 1, 2002, p. 675-678.

Research output: Contribution to journalArticle

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