Optical characterization of 100eV C+ ion doped GaAs

Tsutomu Iida; Yunosuke Makita; Shinji Kimura; Stefan Winter; Akimasa Yamada; Hajime Shibata; Akira Obara; Shigeru Niki; Paul Fons; Yushin Tsai; Shin ichiro Uekusa

doi:10.1557/proc-300-357

Optical characterization of 100eV C+ ion doped GaAs

Tsutomu Iida, Yunosuke Makita, Shinji Kimura, Stefan Winter, Akimasa Yamada, Hajime Shibata, Akira Obara, Shigeru Niki, Paul Fons, Yushin Tsai, Shin ichiro Uekusa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low energy (100 eV) impinging of carbon (C⁺) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature (Tg) between 500°C and 590°C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, `g' and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg = 500°C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Original language	English
Title of host publication	III-V Electronic and Photonic Device Fabrication and Performance
Publisher	Publ by Materials Research Society
Pages	357-362
Number of pages	6
ISBN (Print)	1558991964, 9781558991965
DOIs	https://doi.org/10.1557/proc-300-357
Publication status	Published - 1993 Jan 1
Externally published	Yes
Event	Materials Research Society Spring Meeting - San Francisco, CA, USA Duration: 1993 Apr 12 → 1993 Apr 15

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	300
ISSN (Print)	0272-9172

Conference

Conference	Materials Research Society Spring Meeting
City	San Francisco, CA, USA
Period	93/4/12 → 93/4/15

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-300-357

Cite this

Iida, T., Makita, Y., Kimura, S., Winter, S., Yamada, A., Shibata, H., Obara, A., Niki, S., Fons, P., Tsai, Y., & Uekusa, S. I. (1993). Optical characterization of 100eV C+ ion doped GaAs. In III-V Electronic and Photonic Device Fabrication and Performance (pp. 357-362). (Materials Research Society Symposium Proceedings; Vol. 300). Publ by Materials Research Society. https://doi.org/10.1557/proc-300-357

Optical characterization of 100eV C+ ion doped GaAs. / Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji et al.
III-V Electronic and Photonic Device Fabrication and Performance. Publ by Materials Research Society, 1993. p. 357-362 (Materials Research Society Symposium Proceedings; Vol. 300).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Iida, T, Makita, Y, Kimura, S, Winter, S, Yamada, A, Shibata, H, Obara, A, Niki, S, Fons, P, Tsai, Y & Uekusa, SI 1993, Optical characterization of 100eV C+ ion doped GaAs. in III-V Electronic and Photonic Device Fabrication and Performance. Materials Research Society Symposium Proceedings, vol. 300, Publ by Materials Research Society, pp. 357-362, Materials Research Society Spring Meeting, San Francisco, CA, USA, 93/4/12. https://doi.org/10.1557/proc-300-357

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abstract = "Low energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature (Tg) between 500°C and 590°C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, `g' and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg = 500°C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.",

author = "Tsutomu Iida and Yunosuke Makita and Shinji Kimura and Stefan Winter and Akimasa Yamada and Hajime Shibata and Akira Obara and Shigeru Niki and Paul Fons and Yushin Tsai and Uekusa, {Shin ichiro}",

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T1 - Optical characterization of 100eV C+ ion doped GaAs

AU - Iida, Tsutomu

AU - Makita, Yunosuke

AU - Kimura, Shinji

AU - Winter, Stefan

AU - Yamada, Akimasa

AU - Shibata, Hajime

AU - Obara, Akira

AU - Niki, Shigeru

AU - Fons, Paul

AU - Tsai, Yushin

AU - Uekusa, Shin ichiro

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Low energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature (Tg) between 500°C and 590°C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, `g' and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg = 500°C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

AB - Low energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature (Tg) between 500°C and 590°C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, `g' and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg = 500°C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

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BT - III-V Electronic and Photonic Device Fabrication and Performance

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ER -

Optical characterization of 100eV C+ ion doped GaAs

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