Optical characterization of 100eV C+ ion doped GaAs

Tsutomu Iida, Yunosuke Makita, Shinji Kimura, Stefan Winter, Akimasa Yamada, Hajime Shibata, Akira Obara, Shigeru Niki, Paul Fons, Yushin Tsai, Shin ichiro Uekusa

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Low energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature (Tg) between 500°C and 590°C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, `g' and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg = 500°C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Original languageEnglish
Title of host publicationIII-V Electronic and Photonic Device Fabrication and Performance
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558991964, 9781558991965
Publication statusPublished - 1993 Jan 1
Externally publishedYes
EventMaterials Research Society Spring Meeting - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 15

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


ConferenceMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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