Optical characterization of CulnSe2 grown by molecular beam epitaxy

S. Niki, Y. Makita, A. Yamada, H. Shibata, P. J. Fons, A. Obara, T. Kurafuji, S. Chichibu, H. Nakanishi

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

CulnSe2 epitaxial films with near stoichiometric compositions have been grown on GaAs (001) by molecular beam epitaxy, and radiative recombination processes in these films have been characterized by means of low temperature photoluminescence (PL) spectroscopy. Temperature dependent PL measurements on such epitaxial films have made possible the identification of conduction band to acceptor and donor-acceptor pair transitions. Well-defined emission lines were present near the bandgap, and the emissions at 1.0386eV and at 1.0311eV were found to be due to the ground-state free exciton and the excitons bound to neutral acceptors, respectively. The bandgap of CulnSe2 is also determined to be Eg=1.0462eV at 2K.

Original languageEnglish
Pages (from-to)132-135
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Volume1
Publication statusPublished - 1994 Dec 1
Externally publishedYes
EventProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA
Duration: 1994 Dec 51994 Dec 9

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Optical characterization of CulnSe<sub>2</sub> grown by molecular beam epitaxy'. Together they form a unique fingerprint.

  • Cite this

    Niki, S., Makita, Y., Yamada, A., Shibata, H., Fons, P. J., Obara, A., Kurafuji, T., Chichibu, S., & Nakanishi, H. (1994). Optical characterization of CulnSe2 grown by molecular beam epitaxy. Conference Record of the IEEE Photovoltaic Specialists Conference, 1, 132-135.