Optical characterization of CulnSe2 grown by molecular beam epitaxy

S. Niki; Y. Makita; A. Yamada; H. Shibata; P. J. Fons; A. Obara; T. Kurafuji; S. Chichibu; H. Nakanishi

Optical characterization of CulnSe₂ grown by molecular beam epitaxy

S. Niki, Y. Makita, A. Yamada, H. Shibata, P. J. Fons, A. Obara, T. Kurafuji, S. Chichibu, H. Nakanishi

Research output: Contribution to journal › Conference article › peer-review

Abstract

CulnSe₂ epitaxial films with near stoichiometric compositions have been grown on GaAs (001) by molecular beam epitaxy, and radiative recombination processes in these films have been characterized by means of low temperature photoluminescence (PL) spectroscopy. Temperature dependent PL measurements on such epitaxial films have made possible the identification of conduction band to acceptor and donor-acceptor pair transitions. Well-defined emission lines were present near the bandgap, and the emissions at 1.0386eV and at 1.0311eV were found to be due to the ground-state free exciton and the excitons bound to neutral acceptors, respectively. The bandgap of CulnSe₂ is also determined to be E_g=1.0462eV at 2K.

Original language	English
Pages (from-to)	132-135
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	1
Publication status	Published - 1994 Dec 1
Externally published	Yes
Event	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: 1994 Dec 5 → 1994 Dec 9

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

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title = "Optical characterization of CulnSe2 grown by molecular beam epitaxy",

abstract = "CulnSe2 epitaxial films with near stoichiometric compositions have been grown on GaAs (001) by molecular beam epitaxy, and radiative recombination processes in these films have been characterized by means of low temperature photoluminescence (PL) spectroscopy. Temperature dependent PL measurements on such epitaxial films have made possible the identification of conduction band to acceptor and donor-acceptor pair transitions. Well-defined emission lines were present near the bandgap, and the emissions at 1.0386eV and at 1.0311eV were found to be due to the ground-state free exciton and the excitons bound to neutral acceptors, respectively. The bandgap of CulnSe2 is also determined to be Eg=1.0462eV at 2K.",

author = "S. Niki and Y. Makita and A. Yamada and H. Shibata and Fons, {P. J.} and A. Obara and T. Kurafuji and S. Chichibu and H. Nakanishi",

year = "1994",

month = dec,

day = "1",

language = "English",

volume = "1",

pages = "132--135",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) ; Conference date: 05-12-1994 Through 09-12-1994",

}

TY - JOUR

T1 - Optical characterization of CulnSe2 grown by molecular beam epitaxy

AU - Niki, S.

AU - Makita, Y.

AU - Yamada, A.

AU - Shibata, H.

AU - Fons, P. J.

AU - Obara, A.

AU - Kurafuji, T.

AU - Chichibu, S.

AU - Nakanishi, H.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - CulnSe2 epitaxial films with near stoichiometric compositions have been grown on GaAs (001) by molecular beam epitaxy, and radiative recombination processes in these films have been characterized by means of low temperature photoluminescence (PL) spectroscopy. Temperature dependent PL measurements on such epitaxial films have made possible the identification of conduction band to acceptor and donor-acceptor pair transitions. Well-defined emission lines were present near the bandgap, and the emissions at 1.0386eV and at 1.0311eV were found to be due to the ground-state free exciton and the excitons bound to neutral acceptors, respectively. The bandgap of CulnSe2 is also determined to be Eg=1.0462eV at 2K.

AB - CulnSe2 epitaxial films with near stoichiometric compositions have been grown on GaAs (001) by molecular beam epitaxy, and radiative recombination processes in these films have been characterized by means of low temperature photoluminescence (PL) spectroscopy. Temperature dependent PL measurements on such epitaxial films have made possible the identification of conduction band to acceptor and donor-acceptor pair transitions. Well-defined emission lines were present near the bandgap, and the emissions at 1.0386eV and at 1.0311eV were found to be due to the ground-state free exciton and the excitons bound to neutral acceptors, respectively. The bandgap of CulnSe2 is also determined to be Eg=1.0462eV at 2K.

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M3 - Conference article

AN - SCOPUS:0028693528

SN - 0160-8371

VL - 1

SP - 132

EP - 135

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)

Y2 - 5 December 1994 through 9 December 1994

ER -

Optical characterization of CulnSe₂ grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

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